1SMB10CAT3G ON Semiconductor, 1SMB10CAT3G Datasheet - Page 5
![TVS 600W 10V BIDIRECT SMB](/photos/5/27/52756/do-214aa_smb403a_sml.jpg)
1SMB10CAT3G
Manufacturer Part Number
1SMB10CAT3G
Description
TVS 600W 10V BIDIRECT SMB
Manufacturer
ON Semiconductor
Datasheet
1.1SMB20CAT3G.pdf
(7 pages)
Specifications of 1SMB10CAT3G
Voltage - Reverse Standoff (typ)
10V
Voltage - Breakdown
11.1V
Power (watts)
600W
Polarization
Bidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Polarity
Bidirectional
Clamping Voltage
17 V
Operating Voltage
10 V
Breakdown Voltage
11.1 V
Termination Style
SMD/SMT
Peak Surge Current
35.3 A
Peak Pulse Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
3.81(Max) mm W x 4.57(Max) mm L
Number Of Elements
1
Package Type
SMB
Operating Temperature Classification
Military
Reverse Breakdown Voltage
11.1V
Reverse Stand-off Voltage
10V
Leakage Current (max)
5uA
Peak Pulse Current
35.3A
Test Current (it)
1mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1SMB10CAT3GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1SMB10CAT3G
Manufacturer:
ON
Quantity:
15 000
Part Number:
1SMB10CAT3G
Manufacturer:
ON/安森美
Quantity:
20 000
RESPONSE TIME
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 4.
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 5. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
In most applications, the transient suppressor device is
The inductive effects in the device are due to actual
APPLICATION NOTES
http://onsemi.com
5
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
Some input impedance represented by Z
The data of Figure 1 applies for non-repetitive conditions
At first glance the derating curves of Figure 6 appear to be
in
is essential to