SE15PD-M3/84A Vishay, SE15PD-M3/84A Datasheet - Page 3

DIODE ESD 1.5A 200V DO-220AA

SE15PD-M3/84A

Manufacturer Part Number
SE15PD-M3/84A
Description
DIODE ESD 1.5A 200V DO-220AA
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of SE15PD-M3/84A

Voltage - Forward (vf) (max) @ If
1.05V @ 1.5A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
5µA @ 200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
900ns
Mounting Type
Surface Mount
Package / Case
DO-220AA
Polarization
Unidirectional
Voltage - Reverse Standoff (typ)
200V
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.05V
Reverse Recovery Time Trr Max
900ns
Forward Surge Current Ifsm
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Breakdown
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89025
Revision: 08-Jul-09
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
Figure 1. Maximum Forward Current Derating Curve
10
0
0
1
0.5
0
0
Figure 2. Forward Power Loss Characteristics
T
0.6
0.2
T
at the Cathode Band Terminal
J
L
= 150 °C
25
Measured
Instantaneous Forward Voltage (V)
0.7
0.4
T
Average Forward Current (A)
J
D = 0.1
= 175 °C
50
Lead Temperature (°C)
0.8
0.6
D = 0.2
0.9
Resistive or Inductive Load
75
0.8
D = 0.3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
1.0
1.0
T
100
D = 0.5
J
1.1
= 25 °C
D = t
1.2
1.2
125
p
/T
D = 0.8
1.4
1.3
150
T
D = 1.0
t
p
1.6
1.4
175
1.8
1.5
0.01
100
100
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
PDD-Europe@vishay.com
10
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
30
SE15PB thru SE15PJ
Reverse Voltage (V)
T
40
1
J
= 175 °C
T
T
J
50
J
= 150 °C
= 25 °C
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
80
= 50 mVp-p
90
www.vishay.com
100
100
3

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