SE15PJ-M3/84A Vishay, SE15PJ-M3/84A Datasheet - Page 3

• Manufacturer Part Number: SE15PJ-M3/84A
• Description: DIODE ESD 1.5A 600V DO-220AA
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SE15PJ-M3/84A

• Voltage - Forward (vf) (max) @ If: 1.05V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 900ns
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Polarization: Unidirectional
• Voltage - Reverse Standoff (typ): 600V
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.05V
• Reverse Recovery Time Trr Max: 900ns
• Forward Surge Current Ifsm: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Breakdown: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89025
Revision: 08-Jul-09
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
Figure 1. Maximum Forward Current Derating Curve
10
0
0
1
0.5
0
0
Figure 2. Forward Power Loss Characteristics
T
0.6
0.2
T
at the Cathode Band Terminal
J
L
= 150 °C
25
Measured
Instantaneous Forward Voltage (V)
0.7
0.4
T
Average Forward Current (A)
J
D = 0.1
= 175 °C
50
Lead Temperature (°C)
0.8
0.6
D = 0.2
0.9
Resistive or Inductive Load
75
0.8
D = 0.3
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1.0
1.0
T
100
D = 0.5
J
1.1
= 25 °C
D = t
1.2
1.2
125
p
/T
D = 0.8
1.4
1.3
150
T
D = 1.0
t
p
1.6
1.4
175
1.8
1.5
0.01
100
100
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
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10
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
30
SE15PB thru SE15PJ
Reverse Voltage (V)
T
40
1
J
= 175 °C
T
T
J
50
J
= 150 °C
= 25 °C
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
80
= 50 mVp-p
90
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100
100
3