SM8S30A-E3/2D Vishay, SM8S30A-E3/2D Datasheet

TVS 8W 30V 5% DO-218AB

SM8S30A-E3/2D

Manufacturer Part Number
SM8S30A-E3/2D
Description
TVS 8W 30V 5% DO-218AB
Manufacturer
Vishay
Series
SM8Sr
Datasheet

Specifications of SM8S30A-E3/2D

Voltage - Reverse Standoff (typ)
30V
Voltage - Breakdown
33.3V
Power (watts)
8W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
DO-218AB
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
48.4 V
Operating Voltage
30 V
Breakdown Voltage
33.3 V to 36.8 V
Termination Style
SMD/SMT
Peak Surge Current
136 A
Peak Pulse Power Dissipation
6600 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Dimensions
8.7 mm W x 13.7 mm L x 5 mm H
Reverse Stand-off Voltage Vrwm
30V
Breakdown Voltage Range
33.3V To 36.8V
Clamping Voltage Vc Max
48.4V
Diode Configuration
Unidirectional
Peak Pulse Current Ippm
136A
Diode Case Style
DO-218AB
Number Of Elements
1
Package Type
DO-218AB
Operating Temperature Classification
Military
Reverse Breakdown Voltage
33.3V
Reverse Stand-off Voltage
30V
Leakage Current (max)
10uA
Peak Pulse Current
136A
Test Current (it)
5mA
Operating Temp Range
-55C to 175C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
(1)
Document Number: 88387
Revision: 09-Feb-11
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Peak pulse power dissipation
Power dissipation on infinite heatsink at T
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Non-repetitive current pulse derated above T
P
P
PPM
PPM
(10 x 10 000 μs)
(10 x 1000 μs)
T
J
V
I
Surface Mount PAR
FSM
P
max.
WM
D
DO-218AB
High Temperature Stability and High Reliability Conditions
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
C
= 25 °C unless otherwise noted)
with 10/1000 μs waveform
with 10/10 000 μs waveform
C
10 V to 43 V
= 25 °C (fig. 1)
6600 W
5200 W
175 °C
700 A
8 W
A
= 25 °C
®
New Product
Transient Voltage Suppressors
FEATURES
• Junction passivation optimized design passivated
• T
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
anisotropic rectifier technology
and automotive requirement
condition)
245 °C
accordance to WEEE 2002/96/EC
J
= 175 °C capability suitable for high reliability
SYMBOL
T
I
PPM
J
P
I
, T
FSM
P
PPM
DiodesEurope@vishay.com
D
STG
Vishay General Semiconductor
(1)
SM8S10 thru SM8S43A
See next table
- 55 to + 175
VALUE
6600
5200
700
8.0
www.vishay.com
UNIT
°C
W
W
A
A
1

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SM8S30A-E3/2D Summary of contents

Page 1

... J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode SYMBOL P PPM = 25 °C (fig PPM I FSM STG = 25 °C A DiodesEurope@vishay.com SM8S10 thru SM8S43A Vishay General Semiconductor VALUE UNIT 6600 W 5200 8.0 W (1) See next table 700 - 175 °C www.vishay.com ...

Page 2

... SM8S26 28.9 35.3 5.0 SM8S26A 28.9 31.9 5.0 SM8S28 31.1 38.0 5.0 SM8S28A 31.1 34.4 5.0 SM8S30 33.3 40.7 5.0 SM8S30A 33.3 36.8 5.0 SM8S33 36.7 44.9 5.0 SM8S33A 36.7 40.6 5.0 SM8S36 40.0 48.9 5.0 SM8S36A 40.0 44.2 5.0 SM8S40 44 ...

Page 3

... Fig Load Dump Power Characteristics (10 ms Exponential Waveform) Document Number: 88387 For technical questions within your region, please contact one of the following: Revision: 09-Feb-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, New Product Vishay General Semiconductor = 25 °C unless otherwise noted) C SYMBOL R JC PREFERRED PACKAGE CODE BASE QUANTITY ...

Page 4

... SM8S10 thru SM8S43A Vishay General Semiconductor 100 10 1 0.1 0.01 0.01 0 Pulse Width (s) Fig Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) 0.366 (9.3) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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