NUP4201DR2 ON Semiconductor, NUP4201DR2 Datasheet - Page 2

• Manufacturer Part Number: NUP4201DR2
• Description: IC TVS DIODE ARRAY HS 500W 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NUP4201DR2

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 500W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Dc: 0429
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NUP4201DR2OSTR

ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
UNIDIRECTIONAL
Reverse Breakdown Voltage @ I
Reverse Leakage Current @ V
Maximum Clamping Voltage @ I
Maximum Clamping Voltage @ I
Maximum Clamping Voltage @ I
Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz
Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz
Symbol
A
V
QV
V
Z
Z
= 25°C unless otherwise noted)
I
RWM
I
V
V
I
PP
I
I
ZK
BR
R
ZT
ZK
T
F
C
F
BR
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Coefficient of V
Forward Current
Forward Voltage @ I
Maximum Zener Impedance @ I
Reverse Current
Maximum Zener Impedance @ I
(Circuit tied to Pins 1 and 3 or 2 and 3)
Characteristic
Parameter
RWM
F
PP
PP
PP
t
PP
= 1.0 mA
T
= 1.0 A, 8 x 20 mS
= 10 A, 8 x 20 mS
= 25 A, 8 x 20 mS
= 5.0 Volts
ZT
ZK
BR
RWM
http://onsemi.com
2
Capacitance
Capacitance
Symbol
V
V
V
V
I
BR
R
C
C
C
V
C
V
BR
V
RWM
Min
N/A
N/A
N/A
N/A
6.0
−
−
Uni−Directional TVS
I
F
I
I
I
I
Typ
R
T
PP
5.0
2.5
−
−
−
−
−
V
F
Max
9.8
5.0
10
12
25
10
−
V
Unit
mA
pF
pF
V
V
V
V