CI201210-3N3D Bourns Inc., CI201210-3N3D Datasheet
CI201210-3N3D
Manufacturer Part Number
CI201210-3N3D
Description
INDUCTOR MULTI LAYER CHIP 3.3NH
Manufacturer
Bourns Inc.
Series
CI201210r
Type
Ceramicr
Specifications of CI201210-3N3D
Inductance
3.3nH
Tolerance
±0.3nH
Package / Case
0805 (2012 Metric)
Current
300mA
Dc Resistance (dcr)
130 mOhm Max
Q @ Freq
10 @ 100MHz
Self Resonant Freq
6GHz
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 125°C
Frequency - Test
100MHz
Material - Core
Ceramic
Applications
Mobile Communications
Maximum Dc Current
300 mAmps
Maximum Dc Resistance
0.13 Ohms
Self Resonant Frequency
3400 MHz
Q Minimum
10
Dimensions
2 mm L x 0.500 mm H
Termination Style
SMD/SMT
Shielding
-
Current - Saturation
-
Current - Temperature Rise
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
CI201210-1N0D
CI201210-1N2D
CI201210-1N5D
CI201210-1N8D
CI201210-2N2D
CI201210-2N7D
CI201210-3N3D
CI201210-3N9D
CI201210-4N7D
CI201210-5N6D
CI201210-6N8J
CI201210-8N2J
CI201210-10NJ
CI201210-12NJ
CI201210-15NJ
CI201210-18NJ
CI201210-22NJ
CI201210-27NJ
CI201210-33NJ
CI201210-39NJ
CI201210-47NJ
CI201210-56NJ
CI201210-68NJ
CI201210-82NJ
CI201210-R10J
CI201210-R12J
CI201210-R15J
CI201210-R18J
CI201210-R22J
CI201210-R27J
CI201210-R33J
CI201210-R39J
CI201210-R47J
Electrical Specifications
Packaging Specifications
Bourns Part No.
(7.00)
178.0
100
120
150
180
220
270
330
390
470
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
DIA.
nH
10
12
15
18
22
27
33
39
47
56
68
82
(.827 ± .031)
Inductance
21.0 ± 0.8
(.512 ± .020)
13.0 ± 0.5
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
±0.3nH
Tol.%
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
±5
DIA.
(.079 ± .031)
2.0 ± 0.8
min.
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
15
15
15
15
15
15
15
15
15
15
15
15
10
10
10
10
10
Q
Test Freq.
L,Q MHz
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
Features
I
I
I
I
CI201210 Series - Multi-Layer Chip Inductors
0805 size
Available in E12 Series
High frequency
Nickel barrier
(.512 ± .020)
13.0 ± 0.5
DIA.
(.472)
12.0
(.354)
4000
4000
4000
4000
3800
3600
3400
3200
3000
2800
2600
2200
1800
1650
1350
1350
1100
1100
1000
9.0
min.
900
850
750
400
600
500
450
400
350
330
300
270
220
180
SRF MHz
12000
10000
10000
(1.969)
8000
8000
6000
6000
5400
4500
4000
3650
3000
2500
2450
2000
1750
1700
1550
1350
1300
1200
1150
1000
50.0
850
730
650
550
500
450
410
370
330
280
typ.
ohm max.
0.10
0.10
0.10
0.10
0.10
0.10
0.13
0.15
0.20
0.23
0.25
0.28
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.90
1.00
1.30
1.50
1.80
2.00
2.50
3.00
3.50
4.00
DCR
mA max.
I rms
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
250
250
250
250
250
250
250
250
Temperature Rise
Operating Temperature ..-55°C to +125°C
Storage Temperature ....-55°C to +125°C
Reflow Soldering.....230°C, 10 sec. max.
Resistance to Soldering Heat
Base Material .............................Ceramic
Terminal Electrode ...................Ag, Ni, Sn
Packaging..................3,000 pcs. per reel
Applications
I
I
I
I
General Specifications
Materials
Product Dimensions
Recommended Layout
....................20˚C max. at rated current
................................260˚C, 10 seconds
Mobil phones
Cellular phones
CTV, VCR, HIC, FDD
Automotive electronics
Specifications are subject to change without notice.
(.079 ± .008)
(.002)
2.0 ± 0.2
.05
(.047)
REF.
1.2
DIMENSIONS:
MAX.
(.071)
REF.
1.8
(.031)
(INCHES)
0.8
MM
(.047)
REF.
REF.
1.2
(.049 ± .008)
(.039 ± .008)
1.25 ± 0.2
1.0 ± 0.2
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CI201210-3N3D Summary of contents
Page 1
... Tol.% min. CI201210-1N0D 1.0 ±0.3nH CI201210-1N2D 1.2 ±0.3nH CI201210-1N5D 1.5 ±0.3nH CI201210-1N8D 1.8 ±0.3nH CI201210-2N2D 2.2 ±0.3nH CI201210-2N7D 2.7 ±0.3nH CI201210-3N3D 3.3 ±0.3nH CI201210-3N9D 3.9 ±0.3nH CI201210-4N7D 4.7 ±0.3nH CI201210-5N6D 5.6 ±0.3nH CI201210-6N8J 6.8 ±5 CI201210-8N2J 8.2 ±5 CI201210-10NJ 10 ±5 CI201210-12NJ 12 ± ...
Page 2
... CI201210 Series - Multi-Layer Chip Inductors Electrical Specifications Inductance Characteristics 1000 100 22nH 10nH 10 6.8nH 4.7nH 1 10 100 Frequency (MHz) REV. 10/01 Specifications are subject to change without notice. Q Characteristics 100 1000 10000 10 Frequency (MHz) 10nH 4.7nH 6.8nH 22nH 100 1000 10000 ...