PIC10F200-I/MC Microchip Technology, PIC10F200-I/MC Datasheet - Page 68
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PIC10F200-I/MC
Manufacturer Part Number
PIC10F200-I/MC
Description
IC PIC MCU FLASH 256X12 8DFN
Manufacturer
Microchip Technology
Series
PIC® 10Fr
Datasheets
1.PIC10F200T-IOT.pdf
(96 pages)
2.PIC10F200T-IOT.pdf
(6 pages)
3.PIC10F200T-IOT.pdf
(18 pages)
Specifications of PIC10F200-I/MC
Core Size
8-Bit
Program Memory Size
384B (256 x 12)
Core Processor
PIC
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
3
Program Memory Type
FLASH
Ram Size
16 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DFN
Controller Family/series
PIC10
No. Of I/o's
4
Ram Memory Size
16Byte
Cpu Speed
4MHz
No. Of Timers
1
Digital Ic Case Style
DFN
Processor Series
PIC10F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
16 B
Interface Type
USB
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
4
Number Of Timers
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164334 - MODULE SOCKET FOR 8L 2X3MM DFNAC163020-2 - ADAPTER PROGRAM PIC10F 2X3 DFN
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
PIC10F200/202/204/206
12.2
DS41239D-page 66
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
D022
D023
D024
Note 1:
Param
No.
2:
3:
4:
5:
6:
*
DC Characteristics: PIC10F200/202/204/206 (Extended)
V
S
VREF
Sym
I
I
V
V
WDT
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.
I
I
CMP
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only
and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus
rate, internal code execution pattern and temperature also have an impact on the current consumption.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
or V
The peripheral current is the sum of the base I
enabled.
Measured with the Comparator enabled.
POR
VDD
DD
PD
DD
DR
All I/O pins tri-stated, pulled to V
SS
.
Supply Voltage
RAM Data Retention Voltage
V
to ensure Power-on Reset
V
to ensure Power-on Reset
Supply Current
Power-down Current
WDT Current
Comparator Current
Internal Reference Current
DD
DD
Start Voltage
Rise Rate
Characteristic
(5)
(3)
DD
(5)
can be lowered in Sleep mode without losing RAM data.
(4)
DD
measurements in active operation mode are:
SS
(5), (6)
(2)
, T0CKI = V
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40×C £ T
0.05*
Min
1.5*
2.0
—
—
—
—
—
—
—
—
—
—
DD
or I
DD
, MCLR = V
Typ
PD
0.63
0.35
Vss
175
175
0.1
1.0
12
42
85
—
7
and the additional current consumed when this peripheral is
(1)
Max
275
120
200
5.5
1.1
—
—
—
15
18
22
27
85
9
DD
; WDT enabled/disabled as specified.
Units
V/ms
mA
μA
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
A
See Figure 12-1
Device in Sleep mode
V
V
V
V
V
V
V
V
V
V
£ +125×C (extended)
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0
= 2.0V
= 5.0V
© 2007 Microchip Technology Inc.
Conditions
DD