PIC16F610-I/ML Microchip Technology, PIC16F610-I/ML Datasheet - Page 13

• Manufacturer Part Number: PIC16F610-I/ML
• Description: IC PIC MCU FLASH 1KX14 16QFN
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F610-I/ML

• Core Size: 8-Bit
• Program Memory Size: 1.75KB (1K x 14)
• Core Processor: PIC
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 11
• Program Memory Type: FLASH
• Ram Size: 64 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-QFN
• Controller Family/series: PIC16F
• No. Of I/o's: 12
• Ram Memory Size: 64Byte
• Cpu Speed: 20MHz
• No. Of Timers: 2
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 64 B
• Interface Type: RS-232 , USB
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 11
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC162083 - HEADER MPLAB ICD2 PIC16F616 8/14AC164324 - MODULE SKT FOR MPLAB 8DFN/16QFNXLT16QFN1 - SOCKET TRANSITION 14DIP TO 16QFN
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

4.1.4.8
This command erases the 16-word row of program
memory pointed to by PC<11:4>. If the program mem-
ory array is protected (CP = 0) or the PC points to the
configuration memory (>0x2000), the command is
ignored.
To perform a Row Erase Program Memory, the
following sequence must be performed.
1.
2.
FIGURE 4-11:
 2009 Microchip Technology Inc.
Execute a Row Erase Program Memory
command.
Wait T
PIC12F609/12F615/12F617/16F610/16F616 AND PIC12HV609/12HV615/16HV610/16HV616
ICSPCLK
ICSPDAT
ERA
Row Erase Program Memory
to complete a row erase.
ROW ERASE PROGRAM MEMORY COMMAND
1
1
2
0
0
3
0
4
1
5
6
x
T
ERA
1
x
Next Command
2
0
DS41396A-page 13