ATTINY13A-MMU Atmel, ATTINY13A-MMU Datasheet - Page 115
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ATTINY13A-MMU
Manufacturer Part Number
ATTINY13A-MMU
Description
IC MCU AVR 1K FLASH 20MHZ 10-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY13A-MMU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
10-MLF®, 10-DFN
Processor Series
ATTINY1x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
6
Number Of Timers
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAKSTK511
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 10-bit
Package
10MLF EP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
20 MHz
Operating Supply Voltage
2.5|3.3|5 V
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY13A-MMU
Manufacturer:
DP
Quantity:
34 000
Part Number:
ATTINY13A-MMU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATTINY13A-MMUR
Manufacturer:
TI
Quantity:
4 430
17.8.3
17.8.4
17.8.5
17.8.6
8126E–AVR–07/10
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Figure 17-4. High-voltage Serial Programming Waveforms
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
111):
The algorithms for programming and reading the fuse low/high bits and lock bits are shown in
Table 17-13 on page
SDO
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
PB0
PB1
PB2
PB3
SDI
SCI
SII
gramming” cycle to finish.
programmed.
serial output SDO.
put SDO.
0
MSB
Table 17-13 on page
MSB
MSB
1
111.
2
3
111):
4
Table 18-9 on page
5
6
7
LSB
LSB
LSB
122. When programming the
8
Table 17-13 on page
9
Table 17-13 on page
10
111):
115