ATTINY85-20MU Atmel, ATTINY85-20MU Datasheet - Page 165
ATTINY85-20MU
Manufacturer Part Number
ATTINY85-20MU
Description
IC MCU AVR 8K FLASH 20MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY25-20MU.pdf
(236 pages)
Specifications of ATTINY85-20MU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY8x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Notes:
2586M–AVR–07/10
1. a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low
2. For page sizes less than 256 words, parts of the address (bbbb_bbbb) will be parts of the page address.
3. For page sizes less than 256 bytes, parts of the address (bbbb_bbbb) will be parts of the page address.
4. The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM.
bits, x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 Fuse, 4 = CKSEL1 Fuse, 5 = CKSEL2 Fuse, 6 = CKSEL3
Fuse, 7 = SUT0 Fuse, 8 = SUT1 Fuse, 9 = CKOUT Fuse, A = CKDIV8 Fuse, B = BODLEVEL0 Fuse, C = BODLEVEL1
Fuse, D = BODLEVEL2 Fuse, E = EESAVE Fuse, F = WDTON Fuse, G = SPIEN Fuse, H = DWEN Fuse, I = RSTDISBL
Fuse, J = SELFPRGEN Fuse
Page-wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase
of EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.
165
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