ATTINY45V-10MU Atmel, ATTINY45V-10MU Datasheet - Page 161

• Manufacturer Part Number: ATTINY45V-10MU
• Description: IC AVR MCU FLASH 4K 10MHZ 20MLF
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY45V-10MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 6
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-MLF®, QFN
• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USI
• Maximum Clock Frequency: 10 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Package: 20MLF EP
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 10 MHz
• For Use With: ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20.7.4
2586M–AVR–07/10
Programming the Flash
changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-
programmed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
When writing or reading serial data to the ATtiny25/45/85, data is clocked on the rising edge of
the serial clock, see
Figure 20-4. Addressing the Flash which is Organized in Pages
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
1. Load Command “Write Flash” (see
2. Load Flash Page Buffer.
3. Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high
4. Repeat 2 through 3 until the entire Flash is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
for the “Page Programming” cycle to finish.
programmed.
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
Figure
PAGE ADDRESS
WITHIN THE FLASH
PCMSB
20-5,
PCPAGE
Figure 21-6
Table 20-12 on page
Table
Table
PAGEMSB
PCWORD
and
20-16).
20-16).
WORD ADDRESS
WITHIN A PAGE
Table 21-12
INSTRUCTION WORD
157. When programming the Flash,
PAGE
for details.
PCWORD[PAGEMSB:0]:
00
01
02
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