PIC16F884-I/ML Microchip Technology, PIC16F884-I/ML Datasheet - Page 117

IC PIC MCU FLASH 4KX14 44QFN

PIC16F884-I/ML

Manufacturer Part Number
PIC16F884-I/ML
Description
IC PIC MCU FLASH 4KX14 44QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F884-I/ML

Core Size
8-Bit
Program Memory Size
7KB (4K x 14)
Core Processor
PIC
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
35
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 14x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFN
Controller Family/series
PIC16F
No. Of I/o's
35
Eeprom Memory Size
256Byte
Ram Memory Size
256Byte
Cpu Speed
20MHz
No. Of Timers
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN444-1001 - DEMO BOARD FOR PICMICRO MCU
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16F884-I/ML
Manufacturer:
SIEMENS
Quantity:
200
10.1.4
To read a program memory location, the user must
write the Least and Most Significant address bits to the
EEADR and EEADRH registers, set the EEPGD con-
trol bit of the EECON1 register, and then set control bit
RD. Once the read control bit is set, the program mem-
ory Flash controller will use the second instruction
cycle to read the data. This causes the second instruc-
tion immediately following the “BSF
instruction to be ignored. The data is available in the
very next cycle, in the EEDAT and EEDATH registers;
therefore, it can be read as two bytes in the following
instructions.
EXAMPLE 10-3:
© 2009 Microchip Technology Inc.
;
;
BANKSEL EEADR
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL EECON1
BSF
BSF
NOP
NOP
BANKSEL EEDAT
MOVF
MOVWF
MOVF
MOVWF
BCF
READING THE FLASH PROGRAM
MEMORY
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, RD
EEDAT, W
LOWPMBYTE
EEDATH, W
HIGHPMBYTE
STATUS, RP1
FLASH PROGRAM READ
EECON1,RD”
;
;
;MS Byte of Program Address to read
;
;LS Byte of Program Address to read
;
;Point to PROGRAM memory
;EE Read
;First instruction after BSF EECON1,RD executes normally
;Any instructions here are ignored as program
;memory is read in second cycle after BSF EECON1,RD
;
;W = LS Byte of Program Memory
;
;W = MS Byte of Program EEDAT
;
;Bank 0
PIC16F882/883/884/886/887
EEDAT and EEDATH registers will hold this value until
another read or until it is written to by the user.
Note 1: The two instructions following a program
2: If the WR bit is set when EEPGD = 1, it
memory read are required to be NOPs.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
will be immediately reset to ‘0’ and no
operation will take place.
instruction
DS41291F-page 115
on
the
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