PIC18LF25J11-I/SP Microchip Technology, PIC18LF25J11-I/SP Datasheet - Page 476

IC PIC MCU FLASH 32K 2V 28-SPDIP

PIC18LF25J11-I/SP

Manufacturer Part Number
PIC18LF25J11-I/SP
Description
IC PIC MCU FLASH 32K 2V 28-SPDIP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets

Specifications of PIC18LF25J11-I/SP

Program Memory Type
FLASH
Program Memory Size
32KB (16K x 16)
Package / Case
28-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
4 KB
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
31 KHz
Number Of Programmable I/os
16
Number Of Timers
5
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DM183022, DM183032, DV164136, MA180023
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
A/d Bit Size
10 bit
A/d Channels Available
10
Height
3.3 mm
Length
34.67 mm
Supply Voltage (max)
2.75 V, 3.6 V
Supply Voltage (min)
2 V
Width
7.24 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PIC18F46J11 FAMILY
TABLE 28-1:
TABLE 28-2:
TABLE 28-3:
DS39932C-page 476
DC CHARACTERISTICS
D100
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Param
DC CHARACTERISTICS
Note 1:
Param
Param
No.
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance only
I
E
V
T
I
ULP
DDP
Sym
I
I
I
IW
IE
RETD
V
V
V
CMRR
T
T
OUT
OUT
OUT
P
PR
PEW
Sym
RESP
MC
IOFF
ICM
IRV
and are not tested.
Sym
Response time measured with one comparator input at V
Nominal value at center point of current trim range (CTMUICON<7:2> = 000000).
1
2
3
2
OV
Ultra Low-Power Wake-up Current
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle Time
Characteristic Retention
Supply Current during Programming
CTMU Current Source, Base Range
CTMU Current Source, 10x Range
CTMU Current Source, 100x Range
DD
DDCORE
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
CTMU CURRENT SOURCE SPECIFICATIONS
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to Output Valid
core for Read
for Self-Timed Erase or
Characteristic
Characteristic
DD
Characteristics
(1)
< 3.6V, -40°C < T
A
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
Standard Operating Conditions: 2.0V to 3.6V (unless otherwise stated)
Operating temperature
2.25
Min
10K
< +85°C (unless otherwise stated)
20
MIN
Min
Typ†
33.0
2.8
60
3
Typ
550
5.5
DD
55
0.57
Min
55
0
(1)
/2, while the other input transitions from V
Max
2.75
2.75
0.60
Typ
150
Max
±5
Units
Year Provided no other specifications are
E/W
mA
-40°C ≤ T
ms
ms
nA
V
V
Max
0.63
V
±25
400
Net of I/O leakage and current
sink at 1.6V on pin,
V
See Application Note AN879,
“Using the Microchip Ultra
Low-Power Wake-up Module”
(DS00879)
-40°C to +85°C
V
64 bytes
violated
Units
A
10
DD
nA
μA
μA
DD
MIN
≤ +85°C for industrial
A
© 2009 Microchip Technology Inc.
≤ +85°C for Industrial
= 3.3V
= Minimum operating voltage
CTMUICON<1:0> = 01
CTMUICON<1:0> = 10
CTMUICON<1:0> = 11
Units
mV
dB
ns
μs
V
V
Conditions
Conditions
Comments
SS
to V
DD
.

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