PIC18F26J50-I/SS Microchip Technology, PIC18F26J50-I/SS Datasheet - Page 500

IC PIC MCU FLASH 64K 2V 28-SSOP

PIC18F26J50-I/SS

Manufacturer Part Number
PIC18F26J50-I/SS
Description
IC PIC MCU FLASH 64K 2V 28-SSOP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F26J50-I/SS

Core Size
8-Bit
Program Memory Size
64KB (32K x 16)
Core Processor
PIC
Speed
48MHz
Connectivity
I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
16
Program Memory Type
FLASH
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2.15 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SSOP
Controller Family/series
PIC18
No. Of I/o's
16
Ram Memory Size
3.6875KB
Cpu Speed
48MHz
No. Of Timers
2
Interface
EUSART, I2C, SPI, USB
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3776 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
48 MHz
Number Of Timers
5
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DM183032, DV164136, MA180024, DM183022
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
Package
28SSOP
Device Core
PIC
Family Name
PIC18
Maximum Speed
48 MHz
Operating Supply Voltage
2.5|3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
PIC18F46J50 FAMILY
TABLE 29-1:
TABLE 29-2:
TABLE 29-3:
DS39931C-page 500
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Operating Conditions: 3.0V < V
D310
D311
D312
310
Note 1:
Param
Param
No.
Param
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
DDP
Sym
IW
IE
RETD
P
PR
PEW
only and are not tested.
Response time measured with one comparator input at V
V
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
V
VR
VR
T
DD
V
V
V
CMRR
T
T
SET
RES
RESP
MC
IOFF
ICM
IRV
Sym
.
AA
UR
Sym
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
2
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
VOLTAGE REFERENCE SPECIFICATIONS
OV
DD
DDCORE
core for Read
Resolution
Absolute Accuracy
Unit Resistor Value (R)
Settling Time
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to
Output Valid
Characteristic
for Self-Timed Erase or
Characteristics
Characteristics
DD
DD
(1)
< 3.6V, -40°C < T
< 3.6V, -40°C < T
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
2.25
Min
10K
A
A
20
MIN
V
< +85°C (unless otherwise stated)
< +85°C (unless otherwise stated)
DD
Min
/24
0.57
Min
55
Typ†
0
33.0
2.8
3
Typ
2k
DD
/2, while the other input transitions from V
0.60
+/-5
Typ
150
Max
2.75
2.75
V
Max
DD
1/2
10
/32
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
+/-25
0.63
Max
V
V
V
400
10
Units
DD
LSb
LSb
A
μs
Ω
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
V
voltage
64 bytes
specifications are violated
MIN
Units
= Minimum operating
mV
dB
ns
μs
V
V
Conditions
Comments
Comments
SS
to

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