C8051F712-GQ Silicon Laboratories Inc, C8051F712-GQ Datasheet - Page 148
![IC 8051 MCU 8K FLASH 48-TQFP](/photos/12/16/121695/c8051f712-gq_sml.jpg)
C8051F712-GQ
Manufacturer Part Number
C8051F712-GQ
Description
IC 8051 MCU 8K FLASH 48-TQFP
Manufacturer
Silicon Laboratories Inc
Series
C8051F71xr
Specifications of C8051F712-GQ
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Cap Sense, POR, PWM, Temp Sensor, WDT
Number Of I /o
39
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
32 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TQFP, 48-VQFP
Processor Series
C8051F7x
Core
8051
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
I2C, SMBus, SPI, UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
39
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F700DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
Package
48TQFP
Device Core
8051
Family Name
C8051F71x
Maximum Speed
25 MHz
Operating Supply Voltage
1.8|3 V
For Use With
336-1635 - DEV KIT FOR C8051F700
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
336-1644
Available stocks
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Part Number:
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Manufacturer:
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C8051F70x/71x
22. Flash Memory
On-chip, re-programmable Flash memory is included for program code and non-volatile data storage. The
Flash memory can be programmed in-system through the C2 interface or by software using the MOVX
write instruction. Once cleared to logic 0, a Flash bit must be erased to set it back to logic 1. Flash bytes
would typically be erased (set to 0xFF) before being reprogrammed. The write and erase operations are
automatically timed by hardware for proper execution; data polling to determine the end of the write/erase
operations is not required. Code execution is stalled during Flash write/erase operations. Refer to
Table 9.6 for complete Flash memory electrical characteristics.
22.1. Programming The Flash Memory
The simplest means of programming the Flash memory is through the C2 interface using programming
tools provided by Silicon Laboratories or a third party vendor. This is the only means for programming a
non-initialized device. For details on the C2 commands to program Flash memory, see Section “35. C2
Interface” on page 301.
The Flash memory can be programmed by software using the MOVX write instruction with the address and
data byte to be programmed provided as normal operands. Before programming Flash memory using
MOVX, Flash programming operations must be enabled by: (1) setting the PSWE Program Store Write
Enable bit (PSCTL.0) to logic 1 (this directs the MOVX writes to target Flash memory); and (2) Writing the
Flash key codes in sequence to the Flash Lock register (FLKEY). The PSWE bit remains set until cleared
by software.
Note: A minimum SYSCLK frequency is required for writing or erasing Flash memory, as detailed in Section
“Table 9.6. Flash Electrical Characteristics” on page 50.
For detailed guidelines on programming Flash from firmware, please see Section “22.4. Flash Write and
Erase Guidelines” on page 150.
To ensure the integrity of the Flash contents, the on-chip VDD Monitor must be enabled and enabled as a
reset source in any system that includes code that writes and/or erases Flash memory from software. Fur-
thermore, there should be no delay between enabling the V
Monitor and enabling the V
Monitor as a
DD
DD
reset source. Any attempt to write or erase Flash memory while the V
Monitor is disabled, or not
DD
enabled as a reset source, will cause a Flash Error device reset.
22.1.1. Flash Lock and Key Functions
Flash writes and erases by user software are protected with a lock and key function. The Flash Lock and
Key Register (FLKEY) must be written with the correct key codes, in sequence, before Flash operations
may be performed. The key codes are: 0xA5, 0xF1. The timing does not matter, but the codes must be
written in order. If the key codes are written out of order, or the wrong codes are written, Flash writes and
erases will be disabled until the next system reset. Flash writes and erases will also be disabled if a Flash
write or erase is attempted before the key codes have been written properly. The Flash lock resets after
each write or erase; the key codes must be written again before a following Flash operation can be per-
formed. The FLKEY register is detailed in SFR Definition 22.2.
22.1.2. Flash Erase Procedure
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
148
Rev. 1.0
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