STR715FR0T6 STMicroelectronics, STR715FR0T6 Datasheet - Page 46

MCU 32BIT 64KB FLASH 64-LQFP

STR715FR0T6

Manufacturer Part Number
STR715FR0T6
Description
MCU 32BIT 64KB FLASH 64-LQFP
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet

Specifications of STR715FR0T6

Core Processor
ARM7
Core Size
32-Bit
Speed
66MHz
Connectivity
I²C, HDLC, Smartcard, SPI, UART/USART
Peripherals
PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (64K x 8 + 16K)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 4x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
STR715x
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
16 KB
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Operating Supply Voltage
3 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR7, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 4 Channel
For Use With
MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KIT497-6412 - BOARD EVAL STPM01/STR715FR0MCBSTR7 - BOARD EVAL STM STR71X SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
497-4888

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Electrical parameters
4.3.3
46/78
Memory characteristics
Flash memory
V
Table 24.
Notes:
1. T
2. Guaranteed by design, not tested in production
N
N
Symbol
33
t
t
t
END_B0
END_B1
t
RPD
PSL
ESL
t
t
t
t
t
PDW
t
t
t
t
ESR
PB0
PB1
RET
PW
= 3.0 to 3.6V, T
ES
ES
ES
ES
A
=45°C after 0 cycles. Guaranteed by characterization, not tested in production.
2)
2)
2)
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery when disabled
Program Suspend Latency
Erase Suspend Latency
Endurance (Bank 0
sectors)
Endurance (Bank 1
sectors)
Data Retention (Bank 0
and Bank 1)
Erase Suspend Rate
Flash memory characteristics
Parameter
A
= -40 to 85 °C unless otherwise specified.
Double Word Program
Double Word Program
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
T
Min time from Erase
Resume to next Erase
Suspend
A
=85°
Test conditions
Min.
100
10
20
20
Value
Typ
130
1.6
1.9
0.7
0.6
8.0
6.6
0.9
0.8
2.3
40
60
Max
13.7
11.2
170
300
2.1
4.0
3.3
1.1
1.0
1.5
1.3
20
10
1)
STR71xF
kcycles
kcycles
Years
ms
Unit
ms
µs
µs
µs
µs
µs
s
s
s
s
s

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