STR711FR2H6 STMicroelectronics, STR711FR2H6 Datasheet - Page 48

• Manufacturer Part Number: STR711FR2H6
• Description: MCU 32BIT 256KB FLASH 64-LFBGA
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR711FR2H6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: HDLC, I²C, SmartCard, SPI, UART/USART, USB
• Peripherals: PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LFBGA
• Processor Series: STR711x
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: USB
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR7, KSK-STR711-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR710-SK/HIT, STR711-SK/IAR, STR712-SK/IAR, STR71X-SK/RAIS, STX-PRO/RAIS, STX-RLINK, STR79-RVDK/CPP, STR79-RVDK, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 4 Channel
• For Use With: MCBSTR7UME - MCBSTR7 + ULINK-ME DEV KITMCBSTR7 - BOARD EVAL STM STR71X SERIES497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU497-4550 - KIT IAR STARTER STR711/STR712
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5643

Electrical parameters
48/78
Table 25.
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 26.
Notes:
1. Not tested in production.
2. BGA and LQFP devices have similar EMI characteristics.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-static discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Symbol
Symbol
V
V
FESD
EFTB
S
EMI
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on V
pins to induce a functional disturbance
Peak level
EMS data
EMI data
Parameter
Parameter
V
LQFP64 package
conforming to SAE J
1752/3
33
=3.3 V, T
Conditions
DD
A
and V
=+25°C,
SS
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
33
33
Monitored
=3.3 V, T
=3.3 V, T
A
A
Conditions
=+25°C, f
=+25°C, f
16/ 48
MHz
[f
17
17
11
OSC4M
4
MCLK
MCLK
Max vs.
=32 MHz
=32 MHz
/f
HCLK
MHz
16/8
19
16
11
3
]
STR71xF
Level/
Class
dBµV
Unit
2B
4A
-