ATTINY25V-10SSH Atmel, ATTINY25V-10SSH Datasheet - Page 161
ATTINY25V-10SSH
Manufacturer Part Number
ATTINY25V-10SSH
Description
IC MCU AVR 2KB FLASH 10MHZ 8SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY25-20MU.pdf
(236 pages)
Specifications of ATTINY25V-10SSH
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Processor Series
ATtiny
Core
AVR
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
SPI, USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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20.7.4
2586M–AVR–07/10
Programming the Flash
changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-
programmed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
When writing or reading serial data to the ATtiny25/45/85, data is clocked on the rising edge of
the serial clock, see
Figure 20-4. Addressing the Flash which is Organized in Pages
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
1. Load Command “Write Flash” (see
2. Load Flash Page Buffer.
3. Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high
4. Repeat 2 through 3 until the entire Flash is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
for the “Page Programming” cycle to finish.
programmed.
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
Figure
PAGE ADDRESS
WITHIN THE FLASH
PCMSB
20-5,
PCPAGE
Figure 21-6
Table 20-12 on page
Table
Table
PAGEMSB
PCWORD
and
20-16).
20-16).
WORD ADDRESS
WITHIN A PAGE
Table 21-12
INSTRUCTION WORD
157. When programming the Flash,
PAGE
for details.
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
161
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