PIC16F1826-E/P Microchip Technology, PIC16F1826-E/P Datasheet - Page 110

• Manufacturer Part Number: PIC16F1826-E/P
• Description: MCU PIC 8BIT 2K FLASH 18-DIP
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 16Fr

Specifications of PIC16F1826-E/P

• Core Size: 8-Bit
• Program Memory Size: 3.5KB (2K x 14)
• Core Processor: PIC
• Speed: 32MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 18-DIP (0.300", 7.62mm)
• Controller Family/series: PIC16F
• No. Of I/o's: 16
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 256Byte
• Cpu Speed: 32MHz
• No. Of Timers: 3
• Core: PIC
• Processor Series: PIC16F
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 32 MHz
• Data Ram Size: 256 B
• On-chip Adc: Yes
• Number Of Programmable I/os: 15
• Number Of Timers: 3
• Mounting Style: Through Hole
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Height: 3.3 mm
• Interface Type: I2C, SPI, UART
• Length: 22.86 mm
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.3 V
• Width: 6.35 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PIC16F/LF1826/27
11.1.4
To read a program memory location, the user must:
1.
2.
3.
4.
Once the read control bit is set, the program memory
Flash controller will use the second instruction cycle to
read the data. This causes the second instruction
immediately following the “BSF EECON1,RD” instruction
to be ignored. The data is available in the very next cycle,
in the EEDATL and EEDATH registers; therefore, it can
be read as two bytes in the following instructions.
EXAMPLE 11-3:
DS41391B-page 110
;
Write the Least and Most Significant address
bits to the EEADRL and EEADRH registers.
Clear the CFGS bit of the EECON1 register.
Set the EEPGD control bit of the EECON1
register.
Then, set control bit RD of the EECON1 register.
BANKSEL EEADRL
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL EECON1
BSF
BSF
NOP
NOP
BANKSEL EEDATL
MOVF
MOVWF
MOVF
MOVWF
READING THE FLASH PROGRAM
MEMORY
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADRL
EECON1, EEPGD
EECON1, RD
EEDATL, W
LOWPMBYTE
EEDATH, W
HIGHPMBYTE
FLASH PROGRAM READ
;
;
;MS Byte of Program Address to read
;
;LS Byte of Program Address to read
;
;Point to PROGRAM memory
;EE Read
;First instruction after BSF EECON1,RD executes normally
;Any instructions here are ignored as program
;memory is read in second cycle after BSF EECON1,RD
;
;W = LS Byte of Program Memory
;
;W = MS Byte of Program EEDATL
;
Preliminary
EEDATL and EEDATH registers will hold this value until
another read or until it is written to by the user.
Note 1: The two instructions following a program
2: Data EEPROM can be read regardless of
memory read are required to be NOPs.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
the setting of the CPD bit.
© 2009 Microchip Technology Inc.
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