ATTINY85V-10MU Atmel, ATTINY85V-10MU Datasheet - Page 162
![IC MCU AVR 8K FLASH 10MHZ 20-QFN](/photos/6/87/68751/313-20-qfn_sml.jpg)
ATTINY85V-10MU
Manufacturer Part Number
ATTINY85V-10MU
Description
IC MCU AVR 8K FLASH 10MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY25-20MU.pdf
(236 pages)
Specifications of ATTINY85V-10MU
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY8x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIPATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 20-5. High-voltage Serial Programming Waveforms
20.7.5
20.7.6
20.7.7
20.7.8
20.7.9
20.7.10
162
SDO
PB0
PB1
PB2
PB3
SDI
SCI
SII
ATtiny25/45/85
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
0
MSB
MSB
MSB
1
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table
The algorithms for reading the Signature bytes and Calibration byte are shown in
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Pro-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
gramming” cycle to finish.
programmed.
serial output SDO.
put SDO.
20-16.
2
Table
3
20-16):
4
5
CC
6
power off.
Table 21-11 on page
7
LSB
LSB
LSB
8
175. When programming the
Table
9
Table
20-16):
10
20-16):
Table
2586M–AVR–07/10
20-16.
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