ATTINY44V-10SSUR Atmel, ATTINY44V-10SSUR Datasheet - Page 170

• Manufacturer Part Number: ATTINY44V-10SSUR
• Description: MCU AVR 4KB FLASH 10MHZ 20SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY44V-10SSUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

19.7.5
170
ATtiny24/44/84
Programming the EEPROM
Figure 19-4. Addressing the Flash which is Organized in Pages
Figure 19-5. High-voltage Serial Programming Waveforms
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
SDO
PB0
PB1
PB2
PB3
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
SDI
SCI
SII
ming” cycle to finish.
programmed.
PROGRAM MEMORY
PROGRAM
COUNTER
PAGE
0
MSB
Table 19-16 on page
PAGE ADDRESS
WITHIN THE FLASH
MSB
MSB
1
PCMSB
2
PCPAGE
3
171):
4
PAGEMSB
PCWORD
Table 20-12 on page
5
WORD ADDRESS
WITHIN A PAGE
6
INSTRUCTION WORD
7
PAGE
LSB
LSB
LSB
8
183. When programming the
9
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
10
8006K–AVR–10/10