PIC16C770/P Microchip Technology, PIC16C770/P Datasheet - Page 149

IC MCU CMOS A/D 2K 20MHZ 20-DIP

PIC16C770/P

Manufacturer Part Number
PIC16C770/P
Description
IC MCU CMOS A/D 2K 20MHZ 20-DIP
Manufacturer
Microchip Technology
Series
PIC® 16Cr

Specifications of PIC16C770/P

Program Memory Type
OTP
Program Memory Size
3.5KB (2K x 14)
Package / Case
20-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
15
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 6x12b
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Processor Series
PIC16C
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C/SPI/SSP
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
3
Operating Supply Voltage
2.5 V to 5.5 V
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
ICE2000
Minimum Operating Temperature
0 C
On-chip Adc
6-ch x 12-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DVA16XP200 - ADAPTER ICE 20DIP/SOIC/SSOPAC164028 - MODULE SKT PROMATEII 20SOIC/DIP
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
15.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Maximum voltage between AV
Maximum voltage between AV
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ......................................................................................................... -0.3V to +10.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA and PORTB (combined).................................................................................200 mA
Maximum current sourced by PORTA and PORTB (combined) ...........................................................................200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2002 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
DD
with respect to V
IK
OK
(V
DD
SS
I
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
DD
SS
< 0 or V
SS
and V
and V
I
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
........................................................................................................ -0.3V to +8.5V
O
(except V
SS
DD
DD
> V
)
pins
pins
DD
)
DD
, MCLR and RA4) .......................................... -0.3V to (V
DD
x {I
PIC16C717/770/771
DD
-
I
OH
} +
{(V
DD
- V
OH
) x I
DS41120B-page 147
OH
} + (V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
0.3V
0.3V
OL
).

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