PIC18F24J50-I/ML Microchip Technology, PIC18F24J50-I/ML Datasheet - Page 500

• Manufacturer Part Number: PIC18F24J50-I/ML
• Description: IC PIC MCU FLASH 16K 2V 28-QFN
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F24J50-I/ML

• Core Size: 8-Bit
• Program Memory Size: 16KB (8K x 16)
• Oscillator Type: Internal
• Core Processor: PIC
• Speed: 48MHz
• Connectivity: I²C, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Ram Size: 3.8K x 8
• Voltage - Supply (vcc/vdd): 2.15 V ~ 3.6 V
• Data Converters: A/D 10x10b
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Controller Family/series: PIC18
• No. Of I/o's: 16
• Ram Memory Size: 3776Byte
• Cpu Speed: 48MHz
• No. Of Timers: 5
• No. Of Pwm: RoHS Compliant
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 3776 B
• Interface Type: EUSART, I2C, SPI
• Maximum Clock Frequency: 48 MHz
• Number Of Timers: 5
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DM183032, DM183022, MA180024, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 10 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

PIC18F46J50 FAMILY
TABLE 29-1:
TABLE 29-2:
TABLE 29-3:
DS39931C-page 500
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Operating Conditions: 3.0V < V
D310
D311
D312
310
Note 1:
Param
Param
No.
Param
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
DDP
Sym
IW
IE
RETD
P
PR
PEW
only and are not tested.
Response time measured with one comparator input at V
V
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
V
VR
VR
T
DD
V
V
V
CMRR
T
T
SET
RES
RESP
MC
IOFF
ICM
IRV
Sym
.
AA
UR
Sym
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
2
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
VOLTAGE REFERENCE SPECIFICATIONS
OV
DD
DDCORE
core for Read
Resolution
Absolute Accuracy
Unit Resistor Value (R)
Settling Time
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to
Output Valid
Characteristic
for Self-Timed Erase or
Characteristics
Characteristics
DD
DD
(1)
< 3.6V, -40°C < T
< 3.6V, -40°C < T
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
2.25
Min
10K
A
A
20
—
—
—
MIN
V
< +85°C (unless otherwise stated)
< +85°C (unless otherwise stated)
DD
Min
—
—
—
/24
0.57
Min
—
55
—
—
Typ†
0
33.0
2.8
—
—
—
—
3
Typ
2k
—
—
—
DD
/2, while the other input transitions from V
0.60
+/-5
Typ
150
—
—
—
Max
2.75
2.75
—
—
—
—
—
V
Max
DD
1/2
10
—
/32
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
+/-25
0.63
Max
V
V
V
400
10
—
Units
DD
LSb
LSb
A
μs
Ω
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
V
voltage
64 bytes
specifications are violated
MIN
Units
= Minimum operating
mV
dB
ns
μs
V
V
Conditions
Comments
Comments
SS
to