ATMEGA329V-8MU Atmel, ATMEGA329V-8MU Datasheet - Page 20

• Manufacturer Part Number: ATMEGA329V-8MU
• Description: IC AVR MCU 32K 8MHZ 64-QFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA329V-8MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 54
• Program Memory Size: 32KB (16K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-MLF®, 64-QFN
• Processor Series: ATMEGA32x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SPI, USART, USI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 54
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• For Use With: ATSTK600-TQFP64 - STK600 SOCKET/ADAPTER 64-TQFP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.3
7.3.1
7.3.2
20
EEPROM Data Memory
ATmega329/3290/649/6490
EEPROM Read/Write Access
EEPROM Write During Power-down Sleep Mode
Figure 7-3.
The ATmega329/3290/649/6490 contains 1/2K bytes of data EEPROM memory. It is organized
as a separate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
page
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See “Preventing EEPROM Corruption” on page 21.
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
When entering Power-down sleep mode while an EEPROM write operation is active, the
EEPROM write operation will continue, and will complete before the Write Access time has
passed. However, when the write operation is completed, the clock continues running, and as a
308,
page
CC
Address
clk
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Data
Data
313, and
WR
CPU
RD
page 296
Compute Address
T1
Memory Access Instruction
respectively.
Address valid
for details on how to avoid problems in these
T2
Table
7-1. A self-timing function, however,
Next Instruction
T3
2552K–AVR–04/11