ATMEGA644V-10MUR Atmel, ATMEGA644V-10MUR Datasheet - Page 274
ATMEGA644V-10MUR
Manufacturer Part Number
ATMEGA644V-10MUR
Description
MCU AVR 64K FLASH 10MHZ 44QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA644V-10MUR
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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24.7
24.8
274
Addressing the Flash During Self-Programming
Self-Programming the Flash
ATmega644
The Z-pointer is used to address the SPM commands. The Z pointer consists of the Z-registers
ZL and ZH in the register file. The number of bits actually used is implementation dependent.
Since the Flash is organized in pages (see
be treated as having two different sections. One section, consisting of the least significant bits, is
addressing the words within a page, while the most significant bits are addressing the pages.
This is shown in
addressed independently. Therefore it is of major importance that the Boot Loader software
addresses the same page in both the Page Erase and Page Write operation. Once a program-
ming operation is initiated, the address is latched and the Z-pointer can be used for other
operations.
The (E)LPM instruction use the Z-pointer to store the address. Since this instruction addresses
the Flash byte-by-byte, also bit Z0 of the Z-pointer is used.
Figure 24-3. Addressing the Flash During SPM
Note:
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Bit
ZH (R31)
ZL (R30)
Z - REGISTER
1. The different variables used in
PROGRAM MEMORY
BIT
Z15
Z7
PAGE
23
15
PROGRAM
COUNTER
7
15
Figure
PAGE ADDRESS
WITHIN THE FLASH
ZPCMSB
PCMSB
Z14
22
14
Z6
24-3. Note that the Page Erase and Page Write operations are
6
PCPAGE
Z13
21
13
Z5
5
Figure 24-3
ZPAGEMSB
PAGEMSB
Table 25-7 on page
PCWORD
Z12
Z4
20
12
4
WORD ADDRESS
WITHIN A PAGE
(1)
are listed in
1
0
0
INSTRUCTION WORD
Z11
19
11
Z3
3
PAGE
Table 25-10 on page
287), the Program Counter can
Z10
18
10
Z2
2
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
Z9
Z1
17
9
1
289.
2593N–AVR–07/10
16
Z8
Z0
8
0
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