DSPIC30F2023-30I/PTD32 Microchip Technology, DSPIC30F2023-30I/PTD32 Datasheet - Page 32

IC DSPIC MCU/DSP 12K 44-TQFP

DSPIC30F2023-30I/PTD32

Manufacturer Part Number
DSPIC30F2023-30I/PTD32
Description
IC DSPIC MCU/DSP 12K 44-TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F2023-30I/PTD32

Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
Q4035438

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2023-30I/PTD32
Manufacturer:
Microchip Technology
Quantity:
135
Part Number:
DSPIC30F2023-30I/PTD32
Manufacturer:
Microchip Technology
Quantity:
10 000
TABLE 11-5:
DS70284C-page 32
Step 6: Update the row address stored in NVMADRU:NVMADR. When W6 rolls over to 0x0, NVMADRU must be
0000
0000
0000
0000
Step 7: Reset device internal PC.
0000
0000
Step 8: Repeat Steps 3-7 until all rows of code memory are erased.
Step 9: Initialize NVMADR and NVMADRU to erase executive memory and initialize W7 for row address updates.
0000
0000
0000
0000
0000
Step 10: Set NVMCON to erase 1 row of executive memory.
0000
0000
Step 11: Unlock the NVMCON to erase 1 row of executive memory.
0000
0000
0000
0000
Step 12: Initiate the erase cycle.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 13: Update the row address stored in NVMADR.
0000
0000
Step 14: Reset device internal PC.
0000
0000
Step 15: Repeat Steps 10-14 until all 24 rows of executive memory are erased.
Command
(Binary)
incremented.
430307
AF0042
EC2764
883B16
040100
000000
EB0300
883B16
200807
883B27
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
A9E761
000000
000000
000000
000000
430307
883B16
040100
000000
SERIAL INSTRUCTION EXECUTION FOR ROW ERASING PROGRAM MEMORY (CONTINUED)
(Hex)
Data
ADD
BTSC
INC
MOV
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
NOP
NOP
Externally time 'P19a' msec
Requirements”)
BCLR NVMCON, #WR
NOP
NOP
NOP
NOP
ADD
MOV
GOTO 0x100
NOP
W6, W7, W6
SR, #C
NVMADRU
W6, NVMADR
W6
W6, NVMADR
#0x80, W7
W7, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
W6, W7, W6
W6, NVMADR
(see
Description
Section 13.0 “AC/DC Characteristics and Timing
© 2010 Microchip Technology Inc.

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