ATMEGA1280V-8CU Atmel, ATMEGA1280V-8CU Datasheet - Page 428
![IC MCU AVR 128K FLASH 100-CBGA](/photos/6/89/68968/313-100-cbga_sml.jpg)
ATMEGA1280V-8CU
Manufacturer Part Number
ATMEGA1280V-8CU
Description
IC MCU AVR 128K FLASH 100-CBGA
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA1280V-8CU
Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
86
Program Memory Size
128KB (64K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TFBGA
Processor Series
ATMEGA128x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
8 KB
Interface Type
2-Wire, SPI, USART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
86
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
For Use With
ATSTK600-TQFP100 - STK600 SOCKET/ADAPTER 100-TQFP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEMATSTK503 - STARTER KIT AVR EXP MODULE 100PATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA1280V-8CU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
- Current page: 428 of 444
- Download datasheet (10Mb)
36.4
36.5
36.6
36.7
36.8
2549M–AVR–09/10
ATmega2560 rev. E
ATmega2560 rev. D
ATmega2560 rev. C
ATmega2560 rev. B
ATmega2560 rev. A
2. High current consumption in sleep mode
•
1. High current consumption in sleep mode
•
•
•
•
•
•
1.
2. Part does not work under 2.4 volts
High current consumption in sleep mode.
Non-Read-While-Write area of flash not functional.
Part does not work under 2.4 volts.
Incorrect ADC reading in differential mode.
Internal ADC reference has too low value.
IN/OUT instructions may be executed twice when Stack is in external RAM.
EEPROM read from application code does not work in Lock Bit Mode 3.
If a pending interrupt cannot wake the part up from the selected sleep mode, the current
consumption will increase during sleep when executing the SLEEP instruction directly after
a SEI instruction.
Problem Fix/Workaround
Before entering sleep, interrupts not used to wake the part from the sleep mode should be
disabled.
No known errata.
Not sampled.
If a pending interrupt cannot wake the part up from the selected sleep mode, the current
consumption will increase during sleep when executing the SLEEP instruction directly after
a SEI instruction.
Problem Fix/Workaround
Before entering sleep, interrupts not used to wake the part from the sleep mode should be
disabled.
Not sampled.
The Non-Read-While-Write area of the flash is not working as expected. The problem is
related to the speed of the part when reading the flash of this area.
Problem Fix/Workaround
- Only use the first 248K of the flash.
- If boot functionality is needed, run the code in the Non-Read-While-Write area at maximum
1/4th of the maximum frequency of the device at any given voltage. This is done by writing
the CLKPR register before entering the boot section of the code.
The part does not execute code correctly below 2.4 volts.
Non-Read-While-Write area of flash not functional
ATmega640/1280/1281/2560/2561
428
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