STM8L101F2P6 STMicroelectronics, STM8L101F2P6 Datasheet - Page 49

• Manufacturer Part Number: STM8L101F2P6
• Description: MCU 8BIT 4K FLASH 20TSSOP
• Manufacturer: STMicroelectronics
• Series: STM8L EnergyLiter

Specifications of STM8L101F2P6

• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Infrared, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-TSSOP
• Processor Series: STM8L10x
• Core: STM8
• Data Bus Width: 8 bit
• Data Ram Size: 1.5 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 18
• Number Of Timers: 3
• Operating Supply Voltage: 1.65 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWSTM8
• Development Tools By Supplier: STX-RLINK
• Minimum Operating Temperature: - 40 C
• Featured Product: STM32 Cortex-M3 Companion Products
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STM8L101xx
9.3.5
Table 25.
1. Data based on characterization results, not tested in production.
2. Retention guaranteed after cycling is 10 years at 55 °C.
3. Retention guaranteed after cycling is 1 year at 55 °C.
4. Data based on characterization performed on the whole data memory (2 Kbytes).
Symbol
N
t
I
t
V
prog
prog
RET
RW
DD
Operating voltage
(all modes, read/write/erase)
Programming time for 1- or 64-byte (block)
erase/write cycles (on programmed byte)
Programming time for 1- to 64-byte (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory)
after 10k erase/write cycles
at T
Data retention (data memory)
after 10k erase/write cycles
at T
Data retention (data memory)
after 300k erase/write cycles
at T
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Memory characteristics
T
Table 24.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
Flash program memory
A
A
A
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
+85 °C
+85 °C
+125 °C
RM
Parameter
RAM and hardware registers
Data retention mode
Parameter
Doc ID 15275 Rev 11
(1)
Halt mode (or Reset)
T
T
A
A
=+25 °C, V
=+25 °C, V
f
MASTER
See notes
See notes
Conditions
T
T
T
Conditions
RET
RET
RET
= 55 °C
= 55 °C
= 85 °C
= 16 MHz
DD
DD
(1)(2)
(1)(3)
= 3.0 V
= 1.8 V
Min
1.4
300
20
20
10
1.65
Min
1
(1)
-
-
-
-
(1)(4)
(1)
(1)
(1)
Electrical parameters
Typ
-
Typ
0.7
6
3
-
-
-
-
-
-
Max
Max
3.6
(1)
-
-
-
-
-
-
-
-
-
-
kcycles
years
Unit
Unit
mA
ms
ms
V
49/81
V