STM32F103C8T6TR STMicroelectronics, STM32F103C8T6TR Datasheet - Page 40

• Manufacturer Part Number: STM32F103C8T6TR
• Description: MCU ARM 64KB FLASH MEM 48-LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F103C8T6TR

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 72MHz
• Connectivity: CAN, I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
• Number Of I /o: 37
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• For Use With: 497-10048 - BOARD EVAL ACCELEROMETER497-10030 - STARTER KIT FOR STM32497-8511 - KIT STARTER FOR STM32 512K FLASH497-6438 - BOARD EVALUTION FOR STM32 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Electrical characteristics
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EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 25.
1. TBD stands for to be determined.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on V
to induce a functional disturbance
EMS characteristics
Parameter
Table
25. They are based on the EMS levels and classes
(1)
DD
and V
SS
pins
V
f
conforms to IEC 1000-4-2
V
f
conforms to IEC 1000-4-4
HCLK
HCLK
DD
DD
3.3 V, T
48 MHz
3.3 V, T
48 MHz
Conditions
A
A
+25 °C,
+25 °C,
STM32F103xx
DD
and
Level/
Class
TBD
4A