STR751FR0H6 STMicroelectronics, STR751FR0H6 Datasheet - Page 54

• Manufacturer Part Number: STR751FR0H6
• Description: MCU 32BIT 64KB FLASH 64LFBGA
• Manufacturer: STMicroelectronics
• Series: STR7r

Specifications of STR751FR0H6

• Core Processor: ARM7
• Core Size: 32-Bit
• Speed: 60MHz
• Connectivity: I²C, SPI, SSI, SSP, UART/USART, USB
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LFBGA
• For Use With: MCBSTR750UME - BOARD EVAL MCBSTR750 + ULINK-MEMCBSTR750U - BOARD EVAL MCBSTR750 + ULINK2497-5754 - KIT STARTER IAR STR750497-5753 - KIT STARTER KEIL FOR STR7/STR9497-5752 - KIT STARTER IAR FOR STR7/STR9497-5748 - BOARD EVALUATION FOR STR750XF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Electrical parameters
6.3.8
54/84
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
Table 32.
1. Hysteresis voltage between Schmitt trigger switching levels.
2. When the current limitation is not possible, the V
3. Leakage could be higher than max. if negative current is injected on adjacent pins.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
5. The R
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured
Symbol
ΣI
I
INJ(PIN)
t
w(IT)in
INJ(PIN
V
R
R
refer to I
induced by V
the I/O for example or an external pull-up or pull-down resistor (see
simulation and/or technology characteristics, not tested in production.
as an external interrupt source.
V
C
V
I
(2)
I
lkg
hys
PU
PD
S
IH
IO
IL
PU
INJ(PIN)
pull-up and R
Input low level voltage
Input high level voltage
Schmitt trigger voltage
hysteresis
Injected Current on any I/O pin
Total injected current (sum of all
I/O and control pins)
Input leakage current on robust
pins
Input leakage current
Static current consumption
Weak pull-up equivalent
resistor
Weak pull-down equivalent
resistor
I/O pin capacitance
External interrupt/wake-up lines
pulse time
General characteristics
IN
<V
specification. A positive injection is induced by V
SS
(5)
(5)
. Refer to
(1)
(6)
Parameter
PD
pull-down equivalent resistor are based on a resistive transistor.
Section 6.2 on page 32
(3)
I/O static characteristics
(4)
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
IN
TTL ports
See
V
Floating input mode
V
V
SS
IN
IN
absolute maximum rating must be respected, otherwise
DD_IO
=
=
≤
V
V
Section 6.3.12 on page 72
V
for more details.
SS
DD_IO
IN
Conditions
≤
V
and T
DD_IO
V
V
V
V
IN
DD_IO
DD_IO
DD_IO
DD_IO
A
>V
Figure
unless otherwise specified.
DD_IO
=3.3 V
=5 V
=3.3 V
=5 V
25). Data based on design
while a negative injection is
Min
50
20
25
20
2
2
Typ
400
200
95
58
80
50
5
Max Unit
± 25
200
150
180
120
0.8
± 4
±1
T
mV
mA
μA
kΩ
kΩ
kΩ
kΩ
pF
V
AP
B