PIC16F84A-04E/SO Microchip Technology, PIC16F84A-04E/SO Datasheet - Page 51
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PIC16F84A-04E/SO
Manufacturer Part Number
PIC16F84A-04E/SO
Description
IC MCU CMOS 4MHZ 1K FLASH 18SOIC
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Datasheets
1.PIC16F688T-ISL.pdf
(688 pages)
2.PIC16F84A-04P.pdf
(88 pages)
3.PIC16F84A-04P.pdf
(6 pages)
Specifications of PIC16F84A-04E/SO
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
13
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
68 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
18-SOIC (7.5mm Width)
For Use With
I3-DB16F84A - BOARD DAUGHTER ICEPIC3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Converters
-
Connectivity
-
9.0
Absolute Maximum Ratings †
Ambient temperature under bias.............................................................................................................-55 C to +125 C
Storage temperature .............................................................................................................................. -65 C to +150 C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Voltage spikes below V
2001 Microchip Technology Inc.
2: Power dissipation is calculated as follows: Pdis = V
ELECTRICAL CHARACTERISTICS
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin rather than
pulling this pin directly to V
DD
with respect to V
IK
(2)
OK
(V
DD
.....................................................................................................................................800 mW
SS
I
(V
< 0 or V
pin ..............................................................................................................................100 mA
O
pin ...........................................................................................................................150 mA
< 0 or V
SS
SS
I
SS
SS
SS
> V
........................................................................................................... -0.3 to +7.5V
........................................................................................................... -0.3 to +8.5V
(1)
SS
O
(except V
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
> V
.
.......................................................................................................-0.3 to +14V
)
DD
)
DD
, MCLR, and RA4) ......................................... -0.3V to (V
DD
x {I
DD
-
I
OH
} +
{(V
DD
PIC16F84A
-V
OH
) x I
OH
DS35007B-page 49
} + (V
DD
O
l x I
+ 0.3V)
20 mA
20 mA
OL
).