ATTINY2313-20SI Atmel, ATTINY2313-20SI Datasheet - Page 174

• Manufacturer Part Number: ATTINY2313-20SI
• Description: IC MCU AVR 2K FLASH 20SOIC
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY2313-20SI

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 18
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Data Converters: -
• Other names: ATTINY2313-24SI; ATTINY2313-24SI

Table 78. Serial Programming Instruction Set
174
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
ATtiny2313
Table 77. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 79. Serial Programming Waveforms
Symbol
t
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
1100 0001
1100 0010
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
Byte 1
SERIAL DATA INPUT
SAMPLE
(MOSI)
(MISO)
0101 0011
100x xxxx
0000 00aa
000x xxxx
0000 00aa
000x xxxx
000x xxxx
0000 0000
00xx xxxx
(SCK)
Byte 2
Instruction Format
MSB
MSB
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxxx bbbb
bbbb xxxx
xbbb bbbb
xbbb bbbb
0000 00bb
xbbb bb00
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
iiii iiii
xxxx xxxx
Byte4
Minimum Wait Delay
4.5 ms
4.0 ms
9.0 ms
4.5 ms
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program Memory Page at
address a:b.
Read data o from EEPROM memory at
address b.
Write data i to EEPROM memory at
address b.
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM page at address b.
LSB
LSB
2543L–AVR–08/10