ATTINY45V-10SI Atmel, ATTINY45V-10SI Datasheet - Page 158
ATTINY45V-10SI
Manufacturer Part Number
ATTINY45V-10SI
Description
IC AVR MCU 4K 10MHZ 8SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY45V-10SI
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 158 of 236
- Download datasheet (5Mb)
Notes:
Figure 20-2. Serial Programming Instruction example
20.6
158
Byte 1
1. Not all instructions are applicable for all parts.
2. a = address
3. Bits are programmed ‘0’, unprogrammed ‘1’.
4. To ensure future compatibility, unused Fuses and Lock bits should be unprogrammed (‘1’) .
5. Refer to the correspondig section for Fuse and Lock bits, Calibration and Signature bytes and Page size.
6. Instructions accessing program memory use a word address. This address may be random within the page range.
7. See htt://www.atmel.com/avr for Application Notes regarding programming and programmers.
High-voltage Serial Programming
ATtiny25/45/85
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
158.
This section describes how to program and verify Flash Program memory, EEPROM Data mem-
ory, Lock bits and Fuse bits in the ATtiny25/45/85.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Program Memory/
EEPROM Memory
Page Buffer
Page N-1
Page 0
Page 1
Page 2
Byte 1
Page Number
Bit 15 B
Byte 2
Write Program Memory Page/
Write EEPROM Memory Page
Adr MSB
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 20-2 on page
0
2586M–AVR–07/10
Byte 4
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