PIC16LF818T-I/MLTSL Microchip Technology, PIC16LF818T-I/MLTSL Datasheet - Page 119

• Manufacturer Part Number: PIC16LF818T-I/MLTSL
• Description: IC PIC MCU FLASH 1KX14 28QFN
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16LF818T-I/MLTSL

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 1.75KB (1K x 14)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PIC16LF818TIMLTSL

15.0
Absolute Maximum Ratings †
Ambient temperature under bias............................................................................................................ -40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Total power dissipation (Note 1) ..................................................................................................................................1W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA ........................................................................................................................100 mA
Maximum current sourced by PORTA...................................................................................................................100 mA
Maximum current sunk by PORTB........................................................................................................................100 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
 2004 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2: Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 k should be used
ELECTRICAL CHARACTERISTICS
to pull MCLR to V
DD
with respect to V
IK
OK
(V
DD
I
SS
(V
< 0 or V
pin ..............................................................................................................................200 mA
O
pin ...........................................................................................................................200 mA
DD
< 0 or V
, rather than tying the pin directly to V
SS
I
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
(Note 2) .............................................................................................-0.3 to +14V
O
(except V
DD
> V
) .......................................................................................................... ±20 mA
DD
) ...................................................................................................±20 mA
DD
and MCLR) ................................................... -0.3V to (V
DD
x {I
DD
DD
– ∑ I
.
OH
} + ∑ {(V
PIC16F818/819
DD
– V
OH
) x I
DS39598E-page 117
OH
} + ∑(V
DD
OL
+ 0.3V)
x I
OL
)