STR750FV2H6 STMicroelectronics, STR750FV2H6 Datasheet - Page 50
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STR750FV2H6
Manufacturer Part Number
STR750FV2H6
Description
MCU 32BIT 256KB FLASH 100-LFBGA
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet
1.STR750FV0T6.pdf
(84 pages)
Specifications of STR750FV2H6
Core Processor
ARM7
Core Size
32-Bit
Speed
60MHz
Connectivity
CAN, I²C, SPI, SSI, SSP, UART/USART, USB
Peripherals
DMA, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LFBGA
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
CAN, I2C, SPI, SSI, SSP, USB
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
72
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
For Use With
MCBSTR750UME - BOARD EVAL MCBSTR750 + ULINK-MEMCBSTR750U - BOARD EVAL MCBSTR750 + ULINK2497-5988 - BOARD DEVELOPMENT LOVE STR750497-5754 - KIT STARTER IAR STR750497-5753 - KIT STARTER KEIL FOR STR7/STR9497-5752 - KIT STARTER IAR FOR STR7/STR9497-5751 - KIT STARTER HITEX FOR STR750497-5748 - BOARD EVALUATION FOR STR750XF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-5649
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STR750FV2H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
6.3.6
50/84
Memory characteristics
Flash memory
Subject to general operating conditions for V
otherwise specified.
Table 26.
1. Data based on characterisation not tested in production
2. 10K program/erase cycles.
Table 27.
1. Data based on characterisation not tested in production.
N
N
Symbol
Symbol
END_B0
END_B1
Y
t
t
t
t
t
t
t
t
PDW
t
t
t
t
RPD
ESR
PB0
PB1
PSL
ESL
PW
RET
ES
ES
ES
ES
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery when disabled
Program Suspend Latency
Erase Suspend Latency
Endurance (Bank 0 sectors)
Endurance (Bank 1 sectors)
Data Retention
Erase Suspend Rate
Flash memory characteristics
Flash memory endurance and data retention
Parameter
Parameter
T
Min time from Erase
Resume to next Erase
Suspend
Single Word programming of
a checker-board pattern
Single Word programming of
a checker-board pattern
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
A
=85° C
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
Conditions
Test Conditions
DD_IO
and V
18
, T
Min
A
100
10
20
20
= -40 to 105 °C unless
(1)
1.176
Typ
1.54
125
392
343
Value
8.0
6.6
0.9
0.8
35
60
2
Typ
Value
Max
2.94
2.38
224
560
532
4.9
13.7
11.2
300
Max
1.5
1.3
20
10
(2)
(2)
(2)
(2)
(1)
(2)
(2)
kcycles
kcycles
Years
Unit
Unit
ms
ms
μs
μs
μs
μs
μs
ms
s
s
s
s