LT1167AIS8#PBF Linear Technology, LT1167AIS8#PBF Datasheet - Page 6
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LT1167AIS8#PBF
Manufacturer Part Number
LT1167AIS8#PBF
Description
IC PREC INSTRMNT-AMP PROG 8-SOIC
Manufacturer
Linear Technology
Specifications of LT1167AIS8#PBF
Amplifier Type
Instrumentation
Number Of Circuits
1
Slew Rate
1.2 V/µs
Gain Bandwidth Product
1MHz
Current - Input Bias
50pA
Voltage - Input Offset
15µV
Current - Supply
900µA
Current - Output / Channel
27mA
Voltage - Supply, Single/dual (±)
4.6 V ~ 36 V, ±2.3 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
No. Of Amplifiers
1
Input Offset Voltage
40µV
Gain Db Min
1dB
Bandwidth
1MHz
Amplifier Output
Single Ended
Cmrr
140dB
Supply Voltage Range
± 2.3V To ± 18V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
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LT1167
elecTrical characTerisTics
temperature range, otherwise specifications are at T
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Does not include the effect of the external gain resistor RG.
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C/LT1167AC-1/LT1167C-1 are designed,
characterized and expected to meet the industrial temperature limits, but
are not tested at –40°C and 85°C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
SYMBOL PARAMETER
PSRR
I
V
I
SR
V
6
S
OUT
OUT
REF
Power Supply Rejection Ratio
Supply Current
Output Voltage Swing
Output Current
Slew Rate
REF Voltage Range
CONDITIONS (NOTE 7)
V
V
V
G = 1, V
(Note 3)
S
S
S
G = 1
G = 10
G = 100
G = 1000
= ±2.3V to ±18V
= ±2.3V to ±5V
= ±5V to ±18V
OUT
= ±10V
A
= 25°C. V
The
l
S
denotes the specifications which apply over the full operating
= ±15V, V
l
l
l
l
l
l
l
l
l
l
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or –40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 8: Referred to input.
–V
–V
–V
0.55
MIN
100
120
125
128
S
S
S
15
+1.4
+1.6
+1.6
LT1167AI/LT1167AI-1
CM
= 0V, 0°C ≤ T
0.95
TYP
112
125
132
140
1.1
20
+V
+V
+V
A
MAX
≤ 70°C, R
1.6
S
S
S
–1.3
–1.5
–1.6 –V
–V
–V
MIN
0.55
115
120
125
L
S
S
S
95
15
+1.4
+1.6
+1.6
= 2k, unless otherwise noted.
LT1167I/LT1167I-1
0.95
TYP
112
125
132
140
1.1
20
+V
+V
+V
MAX
1.6
S
S
S
–1.3
–1.5
–1.6
UNITS
1167fb
V/µs
mA
mA
dB
dB
dB
dB
V
V
V