AD8051ARZ Analog Devices Inc, AD8051ARZ Datasheet - Page 9
![IC OPAMP VF R-R LDIST LP 8SOIC](/photos/5/66/56684/505-8-soic_sml.jpg)
AD8051ARZ
Manufacturer Part Number
AD8051ARZ
Description
IC OPAMP VF R-R LDIST LP 8SOIC
Manufacturer
Analog Devices Inc
Specifications of AD8051ARZ
Slew Rate
170 V/µs
Amplifier Type
Voltage Feedback
Number Of Circuits
1
Output Type
Rail-to-Rail
-3db Bandwidth
110MHz
Current - Input Bias
1.4µA
Voltage - Input Offset
1800µV
Current - Supply
4.8mA
Current - Output / Channel
45mA
Voltage - Supply, Single/dual (±)
3 V ~ 12 V, ±1.5 V ~ 6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Op Amp Type
High Speed
No. Of Amplifiers
1
Bandwidth
110MHz
Supply Voltage Range
3V To 12V
Amplifier Case Style
SOIC
No. Of Pins
8
Common Mode Rejection Ratio
88
Current, Input Bias
1.4 μA
Current, Input Offset
0.1 μA
Current, Output
45 mA
Current, Supply
4.4 mA
Harmonic Distortion
-67 dB
Impedance, Thermal
125 °C/W
Package Type
SOIC-8
Resistance, Input
290 Kilohms
Temperature, Operating, Range
-40 to +125 °C
Voltage, Input
-0.2 to +4 V (Common-Mode)
Voltage, Noise
16 nV/sqrt Hz
Voltage, Offset
1.7 mV
Voltage, Output, High
4.985 V
Voltage, Output, Low
0.015 V
Voltage, Supply
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain Bandwidth Product
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Internal Power Dissipation
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (R)
Operating Temperature Range (A Grade)
Lead Temperature (Soldering 10 sec)
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Specification is for device in free air.
Table 5. Thermal Resistance
Package Type
8-Lead SOIC
5-Lead SOT-23
8-Lead MSOP
14-Lead SOIC
14-Lead TSSOP
See Table 5.
SOIC Packages
SOT-23 Package
MSOP Package
TSSOP Package
1
θ
125
180
150
90
120
JA
12.6 V
Observe power
derating curves
Observe power
derating curves
Observe power
derating curves
Observe power
derating curves
±2.5 V
Observe power
derating curves
−65°C to +150°C
−40°C to +125°C
Ratings
±V
300°C
S
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
Rev. J | Page 9 of 24
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8051/AD8052/AD8054 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8051/AD8052/AD8054 are internally short-
circuit protected, this cannot be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves.
ESD CAUTION
2.5
2.0
1.5
1.0
0.5
0
–55
TSSOP-14
MSOP-8
–35
Temperature for AD8051/AD8052/AD8054
Figure 6. Maximum Power Dissipation vs.
–15
SOIC-8
SOIC-14
AMBIENT TEMPERATURE (°C)
5
AD8051/AD8052/AD8054
SOT-23-5
15
35
55
75
95
115