TL081IDT STMicroelectronics, TL081IDT Datasheet - Page 5

• Manufacturer Part Number: TL081IDT
• Description: IC AMP J-FET SINGLE OP 8 SOIC
• Manufacturer: STMicroelectronics

Specifications of TL081IDT

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 16 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 20pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 1.4mA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/dual (±): 6 V ~ 36 V, ±3 V ~ 18 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Channels: 1
• Voltage Gain Db: 106.02 dB
• Common Mode Rejection Ratio (min): 80 dB
• Input Offset Voltage: 10 mV
• Supply Current: 2.5 mA
• Maximum Power Dissipation: 680 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-2210-2

TL081
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
Symbol
GBP
temperature.
THD
∅m
K
e
R
t
ov
r
n
i
Rise time (T
Overshoot (T
Gain bandwidth product (T
Input resistance
Total harmonic distortion (T
Equivalent input noise voltage
Phase margin
V
V
V
V
F= 1kHz, R
V
R
CC
o
in
in
in
S
= 2V
= 20mV, R
= 20mV, R
= 10mV, R
= 100Ω, F= 1kHz
= ±15V, T
pp
amb
amb
L
= 2kΩ ,C
= +25°C)
L
L
L
= +25°C)
amb
= 2kΩ , C
= 2kΩ , C
= 2kΩ , C
Parameter
= +25°C (unless otherwise specified) (continued)
L
= 100pF, A
L
L
L
amb
amb
= 100pF, unity gain
= 100pF, unity gain
= 100pF, F= 100kHz
= +25°C)
= +25°C),
v
= 20dB,
TL081I, AC, AI, BC,
Min.
2.5
Typ.
10
0.01
0.1
10
15
45
BI
4
12
Max.
Min.
Electrical characteristics
2.5
TL081C
Typ.
10
0.01
0.1
10
15
45
4
12
Max.
degrees
MHz
Unit
----------- -
µs
nV
%
%
Ω
Hz
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