LF347N STMicroelectronics, LF347N Datasheet - Page 3
![IC OPAMP J-FET QUAD 14-DIP](/photos/6/57/65751/497-14-dip__300_mil__series_sml.jpg)
LF347N
Manufacturer Part Number
LF347N
Description
IC OPAMP J-FET QUAD 14-DIP
Manufacturer
STMicroelectronics
Specifications of LF347N
Amplifier Type
J-FET
Number Of Circuits
4
Slew Rate
16 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
20pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
8 V ~ 36 V, ±4 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Number Of Channels
4
Common Mode Rejection Ratio (min)
70 dB
Input Offset Voltage
10 mV
Input Bias Current (max)
200 pA
Supply Current
10.8 mA
Maximum Power Dissipation
680 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Maximum Dual Supply Voltage
+/- 18 V
Mounting Style
Through Hole
Shutdown
No
Technology
BiFET
Voltage Gain Db
106.02 dB
Bandwidth
4 MHz
Channel Separation
120
Common Mode Rejection Ratio
86
Current, Input Bias
20 pA
Current, Input Offset
5 pA
Current, Offset, Input
5 pA (Typ.) @ 25°C
Current, Output
40 mA
Current, Supply
1.4 mA
Gain Bandwidth
4 MHz (Typ.) @ 25°C, 10 mV
Harmonic Distortion
0.01 %
Input Resistance
10^12 Ohms (Typ.)
Number Of Amplifiers
Quad
Package Type
DIP-14
Power Dissipation
680 mW
Resistance, Input
10^12 Ohms
Signal Gain
200 V/mV
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Temperature, Operating, Range
0 to +70 °C
Time, Rise
0.1 μs
Voltage, Input
±15 V
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
3 mV
Voltage, Offset, Input
3 mV (Typ.) @ 25°C
Voltage, Supply
±18 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2964-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LF347N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
V
1.
Symbol
V
CC
±V
CMR
GBP
DV
SVR
V
THD
o1
A
I
I
K
SR
V
e
I
I
CC
OS
R
icm
t
io
ib
/V
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature.
vd
ov
opp
io
r
n
m
= ±15V, T
i
io
o2
Input Offset Voltage (R
Input Offset Voltage Drift
Input Offset Current - note
Input Bias Current - note 1
Large Signal Voltage Gain (R
Supply Voltage Rejection Ratio (R
Supply Current, Per Amp, no Load
Input Common Mode Voltage Range
Common Mode Rejection Ratio (R
Output Short-Circuit Current
Output Voltage Swing
Slew Rate
Rise Time
Overshoot
Gain Bandwidth Product
Input Resistance
Total Harmonic Distortion
Equivalent Input Noise Voltage (R
Phase Margin
Channel Separation ( A
amb
T
T
T
T
f =100kHz, T
T
T
T
T
T
T
T
T
T
T
T
T
V
V
V
f =1kHz, A
T
amb
amb
T
T
min
min
amb
amb
amb
amb
min
min
min
min
amb
amb
amb
amb
min
min
min
i
i
i
= 10V, R
= 20mV, R
= 20mV, R
= +25°C (unless otherwise specified)
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C, V
= 25°C
T
T
T
T
T
T
T
T
T
amb
amb
amb
amb
amb
amb
amb
amb
amb
v
L
amb
= 20dB, R
= 2k , C
L
L
T
T
T
T
T
T
T
= 2k ,C
= 2k , C
T
T
O
s
max
max
max
max
max
max
= 25°C, V
v
max
max
max
= 2Vpp
= 100)
10k )
1)
Parameter
L
L
L
L
= 100pF, T
L
= 2k , C
= 2k , V
= 100pF, T
= 100pF, T
in
S
S
S
= 10mV, R
100
10k
10k
L
o
amb
= 100pF
= ±10V) ,
amb
amb
f = 1KHz)
R
R
R
R
= 25°C, unity gain
L
= 25°C, unity gain
L
L
L
L
= 25°C, unity gain
=2k , C
= 2k
= 10k
= 2k
= 10k
L
= 100pF
Min.
±11
2.5
50
25
80
80
70
70
10
10
10
12
10
12
12
LF147 - LF247 - LF347
Typ.
13.5
10
0.01
200
+15
120
-12
1.4
0.1
10
20
86
86
40
12
16
10
15
45
3
5
4
12
Max.
100
200
2.7
2.7
10
13
20
60
60
4
Degrees
V/mV
----------- -
V/ s
MHz
Unit
mV
V/°C
mA
mA
nV
pA
nA
pA
nA
dB
dB
dB
%
%
Hz
V
V
s
3/10