LF356N/NOPB National Semiconductor, LF356N/NOPB Datasheet - Page 3

• Manufacturer Part Number: LF356N/NOPB
• Description: IC OP AMP MONO WB JFET IN 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET™r

Specifications of LF356N/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 12 V/µs
• Gain Bandwidth Product: 5MHz
• Current - Input Bias: 30pA
• Voltage - Input Offset: 3000µV
• Current - Supply: 5mA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 5 MHz
• Common Mode Rejection Ratio: 80
• Current, Input Bias: 30 pA
• Current, Input Offset: 3 pA
• Current, Output: 25 mA
• Current, Supply: 5 mA
• Impedance, Thermal: 130 °C/W
• Number Of Amplifiers: Single
• Package Type: MDIP-8
• Power Dissipation: 670 mW
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 10 to 36 V
• Voltage, Noise: 12 nV/sqrt Hz
• Voltage, Offset: 3 mV
• Voltage, Output, High: 13 V
• Voltage, Output, Low: -13 V
• Voltage, Supply: ±16 V
• Number Of Channels: 1
• Voltage Gain Db: 106.02 dB
• Common Mode Rejection Ratio (min): 80 dB
• Input Voltage Range (max): 36 V
• Input Voltage Range (min): 10 V
• Input Offset Voltage: 10 mV at +/- 15 V
• Supply Current: 10 mA at +/- 15 V
• Maximum Power Dissipation: 670 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF356N; LF356; LF356N

Symbol
I
R
A
V
V
CMRR
PSRR
B
Supply
Current
SR
GBW
t
e
i
C
Parameter
n
IN
VOL
O
CM
s
Symbol
DC Electrical Characteristics
DC Electrical Characteristics
T
AC Electrical Characteristics
n
Notes for Electrical Characteristics
Note 1: The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by T
T
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: Unless otherwise stated, these test conditions apply:
T
IN
(Note 3)
A
A
A
. The maximum available power dissipation at any temperature is P
= T
= T
J
J
= 25˚C, V
= 25˚C, V
Slew Rate
Gain Bandwidth Product
Settling Time to 0.01%
Equivalent Input Noise
Voltage
Equivalent Input Current
Noise
Input Capacitance
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Typ
Parameter
2
Parameter
S
S
LF155
=
=
±
±
15V
15V
Max
4
Typ
T
T
T
V
V
Over Temperature
V
V
V
(Note 6)
2
LF155/6:
A
LF357: A
(Note 7)
R
f=100 Hz
f=1000 Hz
f=100 Hz
f=1000 Hz
J
J
J
S
O
S
S
S
V
=25˚C, (Notes 3, 5)
=25˚C
S
=
=
=
=
Conditions
=
LF355
T
=1,
=100
±
±
±
±
±
HIGH
Conditions
15V, T
15V, R
15V, R
15V
10V, R
Max
V
4
=5
A
L
L
L
(Continued)
=25˚C
=10k
=2k
=2k
LF156/256/257/356B
D
=(T
LF155/355
Typ
5
JMAX
0.01
0.01
Typ
2.5
25
20
Min
±
±
±
5
4
3
50
25
85
85
12
10
11
−T
3
A
)/
LF155/6
+15.1
10
JA
Typ
200
±
±
−12
100
100
Max
30
13
12
7
12
or the 25˚C P
LF156/256/
356B
Max Min
100
Min
7.5
50
Typ
dMAX
5
±
±
±
50
25
85
85
12
10
11
LF356
, whichever is less.
LF256/7
LF356B
LF156/256/356/
±
10
Typ
±
±
−12
200
100
100
15.1
30
13
12
Max
12
LF356B
10
0.01
0.01
Typ
1.5
12
15
12
5
3
JMAX
Max Min
100
5
,
Typ
JA
±
±
+10
5
25
15
80
80
, and the ambient temperature,
12
10
LF357
LF355/6/7
LF257/357
+15.1
10
Typ
±
±
200
−12
100
100
30
0.01
0.01
Typ
13
12
1.5
50
20
15
12
Max
12
3
10
Max
200
8
Units
Units
mA
MHz
V/µs
V/µs
Units
V/mV
V/mV
µs
pF
pA
nA
dB
dB
V
V
V
V