LF411CN/NOPB National Semiconductor, LF411CN/NOPB Datasheet - Page 11

• Manufacturer Part Number: LF411CN/NOPB
• Description: IC OP AMP LOW JFET INPUT 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF411CN/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 15 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 800µV
• Current - Supply: 1.8mA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 4 MHz
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 50 pA
• Current, Input Offset: 25 pA
• Current, Output: 25 mA
• Current, Supply: 1.8 mA
• Harmonic Distortion: 0.02 %
• Impedance, Thermal: 120 °C/W
• Number Of Amplifiers: Single
• Package Type: MDIP-8
• Power Dissipation: 670 mW
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 10 to 44 V
• Voltage, Noise: 25 nV/sqrt Hz
• Voltage, Offset: 0.8 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±15 V
• Number Of Channels: 1
• Voltage Gain Db: 106.02 dB
• Common Mode Rejection Ratio (min): 70 dB
• Input Voltage Range (max): 44 V
• Input Voltage Range (min): 10 V
• Input Offset Voltage: 2 mV at +/- 15 V
• Supply Current: 3.4 mA at +/- 15 V
• Maximum Power Dissipation: 670 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF411CN; *LF411CN/NOPB; LF411; LF411CN

Simplified Schematic
00565506
Note 11: Available per JM38510/11904
Detailed Schematic
00565534
11
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