LMH6643MA/NOPB National Semiconductor, LMH6643MA/NOPB Datasheet - Page 16

• Manufacturer Part Number: LMH6643MA/NOPB
• Description: IC OP AMP R-R LP 3V 75MA 8-SOIC
• Manufacturer: National Semiconductor
• Series: PowerWise®r

Specifications of LMH6643MA/NOPB

• Amplifier Type: Voltage Feedback
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 135 V/µs
• -3db Bandwidth: 130MHz
• Current - Input Bias: 20nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 2.7mA
• Current - Output / Channel: 75mA
• Voltage - Supply, Single/dual (±): 2.7 V ~ 12.8 V, ±1.35 V ~ 6.4 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Other names: *LMH6643MA; *LMH6643MA/NOPB; LMH6643MA

www.national.com
Application Information
CIRCUIT DESCRIPTION
The LMH664X family is based on National Semiconductor’s
proprietary VIP10 dielectrically isolated bipolar process.
This device family architecture features the following:
•
•
•
•
•
Application Hints
This Op Amp family is a drop-in replacement for the AD805X
family of high speed Op Amps in most applications. In addi-
tion, the LMH664X will typically save about 40% on power
dissipation, due to lower supply current, when compared to
competition. All AD805X family’s guaranteed parameters are
included in the list of LMH664X guaranteed specifications in
order to ensure equal or better level of performance. Howev-
er, as in most high performance parts, due to subtleties of
applications, it is strongly recommended that the performance
of the part to be evaluated is tested under actual operating
conditions to ensure full compliance to all specifications.
With 3V supplies and a common mode input voltage range
that extends 0.5V below V
in low voltage/low power applications. Even with 3V supplies,
the −3dB BW (@ A
limit of 80MHz. Production testing guarantees that process
variations with not compromise speed. High frequency re-
sponse is exceptionally stable confining the typical −3dB BW
over the industrial temperature range to ±2.5%.
As can be seen from the typical performance plots, the
LMH664X output current capability (
compared to AD805X. This enhancement, increases the out-
put load range, adding to the LMH664X’s versatility.
Because of the LMH664X’s high output current capability at-
tention should be given to device junction temperature in
order not to exceed the Absolute Maximum Rating.
Complimentary bipolar devices with exceptionally high f
(
bias current.
A class A-B “turn-around” stage with improved noise,
offset, and reduced power dissipation compared to similar
speed devices (patent pending).
Common Emitter push-push output stage capable of
75mA output current (at 0.5V from the supply rails) while
consuming only 2.7mA of total supply current per channel.
This architecture allows output to reach within milli-volts of
either supply rail.
Consistent performance over the entire operating supply
voltage range with little variation for the most important
specifications (e.g. BW, SR, I
Significant power saving (
devices on the market with similar performance.
∼
8GHz) even under low supply voltage (2.7V) and low
V
= +1) is typically 115MHz with a tested
−
, the LMH664X find applications
∼
40%) compared to competitive
OUT
, etc.)
∼
75mA) is enhanced
t
16
This device family was designed to avoid output phase re-
versal. With input overdrive, the output is kept near supply rail
(or as closed to it as mandated by the closed loop gain setting
and the input voltage). See
FIGURE 1. Input and Output Shown with CMVR Exceeded
However, if the input voltage range of −0.5V to 1V from V
exceeded by more than a diode drop, the internal ESD pro-
tection diodes will start to conduct. The current in the diodes
should be kept at or below 10mA.
Output overdrive recovery time is less than 100ns as can be
seen from
FIGURE 2. Overload Recovery Waveform
Figure 2
plot:
Figure
1:
20018543
20018542
+
is