MCP6S92-E/SN Microchip Technology, MCP6S92-E/SN Datasheet - Page 10

• Manufacturer Part Number: MCP6S92-E/SN
• Description: IC PGA 2CH R-R I/O SPI 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6S92-E/SN

• Package / Case: 8-SOIC (3.9mm Width)
• Amplifier Type: Programmable Gain
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 22 V/µs
• -3db Bandwidth: 18MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 400µV
• Current - Supply: 1mA
• Current - Output / Channel: 25mA
• Voltage - Supply, Single/dual (±): 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Channels: 1
• Available Set Gain: 30.1 dB (Typ)
• Input Offset Voltage: 4 mV @ 5.5 V
• Input Bias Current (max): 0.000001 uA (Typ) @ 5.5 V
• Operating Supply Voltage: 3 V or 5 V
• Supply Current: 1.6 mA @ 5.5V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: MCP6SX2DM-PCTLPD - BOARD DAUGHTER PICTAIL MCP6SX2
• Gain Bandwidth Product: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2.0
Note: Unless otherwise indicated, T
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
FIGURE 2-1:
FIGURE 2-2:
FIGURE 2-3:
 2004 Microchip Technology Inc.
Note:
24%
22%
20%
18%
16%
14%
12%
10%
16%
14%
12%
10%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
8%
6%
4%
2%
0%
8%
6%
4%
2%
0%
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
600 Samples
G = +1
597 Samples
T
600 Samples
G
A
= -40 to +125°C
+2
Ladder Resistance Drift (%/°C)
DC Gain Error, G = +1.
DC Gain Error, G
Ladder Resistance Drift.
DC Gain Error (%)
DC Gain Error (%)
L
= 10 k to V
A
= +25°C, V
+2.
DD
DD
/2 and C
= +2.5V to +5.5V, V
FIGURE 2-4:
FIGURE 2-5:
FIGURE 2-6:
(circuit in Figure 6-4).
L
= 60 pF.
-100
26%
24%
22%
20%
18%
16%
14%
12%
10%
35%
30%
25%
20%
15%
10%
-10
-20
-30
-40
-50
-60
-70
-80
-90
8%
6%
4%
2%
0%
5%
0%
100k
1.E+05
600 Samples
G
T
R
600 Samples
G = +1
T
A
S
A
= -40 to +125°C
= -40 to +125°C
= 10 k
SS
+2
= GND, V
MCP6S91/2/3
R
DC Gain Drift, G = +1.
DC Gain Drift, G
Crosstalk vs. Frequency
1M
DC Gain Drift (%/°C)
DC Gain Drift (%/°C)
S
1.E+06
Frequency (Hz)
= 1 k
R
S
R
= 100
S
= 0
REF
= V
10M
1.E+07
DS21908A-page 10
V
G = +32 V/V
CH0 selected
SS
DD
, G = +1 V/V,
= 5.0V
+2.
100M
1.E+08