MCP6G01T-E/SN Microchip Technology, MCP6G01T-E/SN Datasheet - Page 15
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MCP6G01T-E/SN
Manufacturer Part Number
MCP6G01T-E/SN
Description
IC GAIN BLOCK 1.8V 1CH 8SOIC
Manufacturer
Microchip Technology
Datasheet
1.MCP6G01UT-EOT.pdf
(38 pages)
Specifications of MCP6G01T-E/SN
Operating Temperature
-40°C ~ 125°C
Amplifier Type
General Purpose
Number Of Circuits
1
Output Type
Rail-to-Rail
Slew Rate
4.5 V/µs
-3db Bandwidth
900kHz
Current - Input Bias
1pA
Voltage - Input Offset
1000µV
Current - Supply
110µA
Current - Output / Channel
20mA
Voltage - Supply, Single/dual (±)
1.8 V ~ 5.5 V
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
No. Of Amplifiers
1
Bandwidth
900kHz
Rail To Rail I/o Type
Rail-Rail I/O
No. Of Channels
1
Supply Voltage Range
1.8V To 5.5V
Amplifier Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain Bandwidth Product
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Note: Unless otherwise indicated, T
R
FIGURE 2-37:
Voltage.
FIGURE 2-38:
Swing.
FIGURE 2-39:
Gain = 1 and 10.
© 2006 Microchip Technology Inc.
L
= 100 kΩ to V
0.001
0.001
0.01
0.01
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.1
10
10
1
1
1.5
0
1
(G = +10)
V
f = 1 kHz
Measurement BW = 80 kHz
OUT
10
2.0
= 0.8V
20
DD
/2, C
2.5
Power Supply Voltage (V)
30
DD
Time (10 µs/div)
V
THD plus Noise vs. Supply
Output Swing (V
THD plus Noise vs. Output
Gain Select Timing, with
V
V
OUT
DD
IN
40
L
3.0
= 0.15V
= 60 pF, GSEL = V
= 5.0V
Measurement BW = 80 kHz
(G = +1)
50
G = +50
3.5
G = +10
G = +1
60
4.0
70
P-P
(G = +10)
)
GSEL
80
4.5
A
V
f = 1 kHz
G = +50
G = +10
= +25°C, V
G = +1
90
DD
5.0
= 5.0V
DD
100
5
0
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
/2, and CS is tied low.
5.5
10
DD
= +1.8V to +5.5V, V
MCP6G01/1R/1U/2/3/4
FIGURE 2-40:
Resistance.
FIGURE 2-41:
Gain = 1 and 50.
FIGURE 2-42:
Gain = 1 and 10.
0.001
0.01
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1.E+03
1
1k
0
0
(G = +1)
f = 1 kHz
V
Measurement BW = 80 kHz
(G = +10)
DD
10
10
SS
= 5.0V
20
20
= GND, G = +1 V/V, V
30
30
1.E+04
V
V
V
V
Load Resistance (Ω)
Time (10 µs/div)
Time (10 µs/div)
10k
DD
IN
DD
IN
THD plus Noise vs. Load
Gain Select Timing, with
Gain Select Timing, with
= 0.030V
= 0.030V
40
40
= 5.0V
= 5.0V
(G = +50)
(G = +50)
50
50
V
V
OUT
OUT
(G = +10)
60
60
1.E+05
100k
70
70
DS22004B-page 15
GSEL
GSEL
80
80
(G = +1)
G = +50
G = +10
G = +1
IN
90
90
= (0.3V)/G,
100
100
1.E+06
5
0
5
0
1M
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40