LT1022MH Linear Technology, LT1022MH Datasheet - Page 3

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LT1022MH

Manufacturer Part Number
LT1022MH
Description
HI SPEED PRECISION JFET OA
Manufacturer
Linear Technology
Datasheet

Specifications of LT1022MH

Amplifier Type
J-FET
Number Of Circuits
1
Slew Rate
24 V/µs
Gain Bandwidth Product
8MHz
Current - Input Bias
30pA
Voltage - Input Offset
100µV
Current - Supply
7mA
Current - Output / Channel
20mA
Voltage - Supply, Single/dual (±)
±10 V ~ 18 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-5-8
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Output Type
-
-3db Bandwidth
-
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
GBW
I
The denotes the specifications which apply over the full operating temperature range of V
unless otherwise noted.
SYMBOL PARAMETER
V
I
I
A
CMRR
PSRR
V
The denotes the specifications which apply over the full operating temperature range of – 55°C ≤ T
unless otherwise noted.
Note 1: Absolute Maximum Ratings are those values beyond which the
life of a device may be impaired.
Note 2: Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power;
(b) at T
to account for chip temperature rise when the device is fully warmed up.
Note 3: 10Hz noise voltage density is sample tested on every lot of A
grades. Devices 100% tested at 10Hz are available on request.
SYMBOL PARAMETER
V
I
I
A
CMRR
PSRR
V
S
OS
B
OS
B
OS
VOL
OUT
OS
VOL
OUT
A
= 25°C, with the chip self-heated to approximately 45°C
Gain-Bandwidth Product
Supply Current
Settling Time
Offset Voltage Adjustment Range
Input Offset Voltage
(Note 2)
Average Temperature
Coefficient of Input Offset Voltage
Input Offset Current
Input Bias Current
Large-Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
Input Offset Voltage
Average Temperature
Coefficient of Input Offset Voltage
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
CONDITIONS
f = 1MHz
A = +1 or A = –1
10V Step to 0.05%
10V Step to 0.02%
R
POT
CONDITIONS
H Package
N8 Package
H Package
N8 Package (Note 6)
Warmed Up, T
Warmed Up, T
V
V
V
R
CONDITIONS
(Note 2)
(Note 6)
Warmed Up, T
Warmed Up, T
V
V
V
R
O
CM
S
L
O
CM
S
L
= ±10V, R
= ±10V to ±18V
= 2k
= ±10V, R
= ±10V to ±17V
= 2k
= 100k
= ±10.4V
= ±10.4V
L
L
A
A
= 2k
A
A
= 2k
= 70°C
= 70°C
= 125°C
= 125°C
V
S
= ± 15V, T
MIN
Note 4: This parameter is tested on a sample basis only.
Note 5: Current noise is calculated from the formula: i
q = 1.6 • 10
the contribution of current noise.
Note 6: Offset voltage drift with temperature is practically unchanged when
the offset voltage is trimmed to zero with a 100k potentiometer between
the balance terminals and the wiper tied to V
drift specifications are available on request.
A
LT1022AM
LT1022AC
= 25°C, V
MIN
±12
MIN
±12
80
85
86
40
85
86
TYP
±7
8.5
5.2
0.9
1.3
–19
LT1022AC
LT1022AM
±13.1
±12.9
coulomb. The noise of source resistors up to 1GΩ swamps
± 0.5
TYP
CM
140
±50
250
103
TYP
1.3
230
120
102
15
93
1.5
0.3
92
MAX
7.0
= 0V unless otherwise noted.
CM
±200
MAX
± 4.0
480
MAX
5.0
750
80
5.0
2.0
MIN
= 0V, 0°C ≤ T
LT1022M, LT1022CH
LT1022CN8
A
MIN
±12
≤ 125°C. V
MIN
±12
60
80
84
35
80
84
TYP
±7
8.0
5.2
0.9
1.3
LT1022CN8
A
LT1022CH
+
LT1022M
. Devices tested to tighter
≤ 70°C. V
±13.1
±12.9
± 0.7
TYP
180
300
±60
250
101
0.30
TYP
1.8
3.0
300
120
100
18
91
2.0
90
S
MAX
7.0
= ± 15V, V
n
= (2qI
S
±250
1000
1700
MAX
15.0
± 6.0
LT1022
MAX
1500
100
9.0
9.0
3.0
= ± 15V,
B
CM
)
1/2
= 0V,
, where
UNITS
UNITS
UNITS
µV/°C
µV/°C
V/mV
µV/°C
1022fa
V/mV
3
MHz
mA
mV
µV
µV
pA
pA
dB
dB
µs
µs
µV
nA
nA
dB
dB
V
V

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