NJM4565D NJR, NJM4565D Datasheet - Page 2

• Manufacturer Part Number: NJM4565D
• Description: IC OPAMP DUAL LOW-NOISE WB 8-DIP
• Manufacturer: NJR

Specifications of NJM4565D

• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Slew Rate: 4 V/µs
• Gain Bandwidth Product: 10MHz
• Current - Input Bias: 50nA
• Voltage - Input Offset: 500µV
• Current - Supply: 4.5mA
• Voltage - Supply, Single/dual (±): ±4 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Number Of Channels: 2
• Voltage Gain Db: 100 dB
• Common Mode Rejection Ratio (min): 70 dB
• Input Offset Voltage: 3 mV
• Supply Current: 7 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: - 20 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

■ ABSOLUTE MAXIMUM RATINGS
( note ) For supply voltage less than ±15V,the absolute maximum input voltage is equal to the supply voltage.
■ ELECTRICAL CHARACTERISTICS
- 2 -
Input Common Mode Voltage Range
Maximum Output Voltage Swing 1
Maximum Output Voltage Swing 2
Common Mode Rejection Ratio
Operating Temperature Range
Supply Voltage Rejection Ratio
Equivalent Input Noise Voltage
Storage Temperature Range
Large Signal Voltage Gain
Gain Bandwidth Product
Differential Input Voltage
Input Offset Voltage
Input Offset Current
Power Dissipation
Input Bias Current
Operating Current
Input Resistance
Supply Voltage
PARAMETER
PARAMETER
Input Voltage
Slew Rate
SYMBOL
SYMBOL
CMR
V
V
V
SVR
V
T
T
R
SR
GB
V
V
V
V
P
A
I
+
I
I
OM1
OM2
CC
IO
ICM
opr
stg
B
/V
ID
IC
IO
IN
NI
D
V
-
RIAA,R
TEST CONDITION
R
( SSOP8 ) 250
L
( DMP8 ) 300
( EMP8 ) 300
≥2kΩ,V
S
( DIP8 ) 500
( SIP8 ) 800
=2.2kΩ,30kHz LPF
RATINGS
-40~+125
R
R
R
I
-40~+85
O
R
S
S
S
=25mA
± 18
± 30
± 15 ( note )
L
≤
≤
≤
≥2kΩ
10kΩ
10kΩ
10kΩ
O
=±10V
( Ta=25˚C )
UNIT
MIN.
mW
± 12
± 10
± 12
76.5
0.3
˚C
˚C
86
70
V
V
V
-
-
-
-
-
-
-
± 11.5
TYP.
± 14
± 14
100
0.5
4.5
1.2
50
90
90
10
2
5
4
( Ta=25˚C,V
MAX.
200
3.0
50
7
-
-
-
-
-
-
-
-
-
-
Ver.2007-03-05
+
/V
-
=±15V )
µVrms
UNIT
MHz
V/µs
mV
MΩ
mA
nA
nA
dB
dB
dB
V
V
V