LF351N National Semiconductor, LF351N Datasheet - Page 3

• Manufacturer Part Number: LF351N
• Description: IC OP AMP JFET SINGLE 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF351N

• Amplifier Type: J-FET
• Number Of Circuits: 1
• Slew Rate: 13 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 5000µV
• Current - Supply: 1.8mA
• Voltage - Supply, Single/dual (±): ±5 V ~ 15 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Other names: *LF351N; LF351

AC Electrical Characteristics
Note 1 For operating at elevated temperature the device must be derated based on the thermal resistance
Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage
Note 3 These specifications apply for V
Note 4 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature T
production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation P
recommended if input bias current is to be kept to a minimum
Note 5 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice From
g
Note 6 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate
outside guaranteed limits
Symbol
SR
GBW
e
i
n
n
15V to
g
5V
Slew Rate
Gain Bandwidth Product
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Parameter
S
e
g
15V and 0 C
D
s
T
j
e
T
(Note 3)
A s
T
A
a
a
V
V
T
f
T
70 C V
e
A
j
S
S
jA
e
e
e
e
1000 Hz
P
25 C f
D
25 C R
g
g
Conditions
OS
where
15V T
15V T
I
3
B
e
and I
S
jA
1000 Hz
A
A
e
e
e
is the thermal resistance from junction to ambient Use of a heat sink is
OS
100
25 C
25 C
are measured at V
Min
CM
JA
e
0
LF351
0 01
Typ
13
25
4
Max
j
Due to the limited
nV Hz
pA Hz
Units
V
MHz
s