LPC660AIN National Semiconductor, LPC660AIN Datasheet - Page 4

• Manufacturer Part Number: LPC660AIN
• Description: IC OPAMP LOW PWR CMOS QUAD 14DIP
• Manufacturer: National Semiconductor

Specifications of LPC660AIN

• Amplifier Type: General Purpose
• Number Of Circuits: 4
• Output Type: Rail-to-Rail
• Slew Rate: 0.11 V/µs
• Gain Bandwidth Product: 350kHz
• Current - Input Bias: 0.002pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 160µA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 15.5 V, ±2.38 V ~ 7.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• -3db Bandwidth: -
• Other names: *LPC660AIN

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Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 0V, V
Note 1: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
Note 2: The maximum power dissipation is a function of T
(T
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4: Limits are guaranteed by testing or correlation.
Note 5: V
Note 6: V
Note 7: Input referred. V
Note 8: A military RETS electrical test specification is available on request. At the time of printing, the LPC660AMJ/883 RETS specification complied fully with the
boldface limits in this column. The LPC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9: For operating at elevated temperatures, the device must be derated based on the thermal resistance θ
Note 10: All numbers apply for packages soldered directly into a PC board.
Note 11: Do not connect output to V
J(max)
–T
CM
A
+
+
Parameter
)θ
= 15V, V
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
JA
= 1.5V, V
.
CM
= 7.5V and R
+
O
= 15V and R
= 2.5, and R
+
L
when V
connected to 7.5V. For Sourcing tests, 7.5V ≤ V
(Note 6)
(Note 7)
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
R
L
= 100 kΩ connected to V
L
= 100 kΩ, V
L
+
>
is greater than 13V or reliability may be adversely affected.
1M unless otherwise specified.
Conditions
V
= −10
O
J(max)
= 8 V
, θ
+
/2. Each amp excited in turn with 1 kHz to produce V
J
JA
PP
= 25˚C. Boldface limits apply at the temperature extremes. V
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
4
0.0002
0.11
0.35
0.01
Typ
130
50
17
42
O
≤ 11.5V. For Sinking tests, 2.5V ≤ V
LPC660AMJ/883
(Notes 4, 8)
LPC660AM
Limit
0.07
0.04
±
30 mA over long term may adversely affect reliability.
JA
with P
D
LPC660AI
O
(Note 4)
= (T
= 13 V
Limit
0.07
0.05
O
J
≤ 7.5V.
–T
PP
A
)/θ
.
JA
.
LPC660I
(Note 4)
Limit
0.05
0.03
+
= 5V, V
Units
V/µs
MHz
Deg
min
dB
dB
%
D
=
−