LPC660IN National Semiconductor, LPC660IN Datasheet - Page 10

• Manufacturer Part Number: LPC660IN
• Description: IC OPAMP LOW PWR CMOS QUAD 14DIP
• Manufacturer: National Semiconductor

Specifications of LPC660IN

• Amplifier Type: General Purpose
• Number Of Circuits: 4
• Output Type: Rail-to-Rail
• Slew Rate: 0.11 V/µs
• Gain Bandwidth Product: 350kHz
• Current - Input Bias: 0.002pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 160µA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 15.5 V, ±2.38 V ~ 7.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• -3db Bandwidth: -
• Other names: *LPC660IN

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Application Hints
normally considered a very large resistance, could leak 5 pA
if the trace were a 5V bus adjacent to the pad of an input.
This would cause a 100 times degradation from the
LPC660’s actual performance. However, if a guard ring is
held within 5 mV of the inputs, then even a resistance of
FIGURE 4. Example of Guard Ring in P.C. Board Layout using the LPC660
(Continued)
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perhaps a minor (2:1) degradation of the amplifier’s perfor-
mance. See Figure 5a, Figure 5b, Figure 5c for typical
connections of guard rings for standard op-amp configura-
tions. If both inputs are active and at high impedance, the
guard can be tied to ground and still provide some protec-
tion; see Figure 5d.
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ohms would cause only 0.05 pA of leakage current, or
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