LM709H National Semiconductor, LM709H Datasheet - Page 2

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LM709H

Manufacturer Part Number
LM709H
Description
IC OP AMP GENERAL PURPSE TO-99-8
Manufacturer
National Semiconductor
Datasheet

Specifications of LM709H

Amplifier Type
General Purpose
Number Of Circuits
1
Slew Rate
0.25 V/µs
Current - Input Bias
200nA
Voltage - Input Offset
1000µV
Current - Supply
2.6mA
Voltage - Supply, Single/dual (±)
±9 V ~ 15 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-99-8, Metal Can
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Gain Bandwidth Product
-
Other names
*LM709H

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LM709H
Manufacturer:
NS
Quantity:
5 510
Part Number:
LM709H/883B
Manufacturer:
WRI
Quantity:
12
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Output Resistance
Supply Current
Transient Response
Slew Rate
Input Offset Voltage
Average Temperature R
Coefficient of
Input Offset Voltage
Large Signal
Voltage Gain
Output Voltage Swing
Input Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Input Offset Current
Input Bias Current
Input Resistance
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
Power Dissipation (Note 1)
Differential Input Voltage
Input Voltage
Output Short-Circuit Duration (T
Electrical Characteristics
Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction temperature for LM709 LM709A and 100 C
maximum for L709C For operating at elevated temperatures the device must be derated based on thermal resistance
Note 2 These specifications apply for
Note 3 Absolute Maximum Ratings indicate limits which if exceeded may result in damage Operating Ratings are conditions where the device is expected to be
functional but not necessarily within the guaranteed performance limits For guaranteed specifications and test conditions see the Electrical Characteristics
g
Risetime
Overshoot
9V
LM709 LM709A LM709C
LM709 LM709A
LM709C
LM709 LM709A LM709C
LM709 LM709A LM709C
LM709 LM709A LM709C
Parameter
s
V
S s g
15V C1
e
T
T
T
T
T
T
V
T
T
R
R
V
V
V
V
V
R
R
T
T
T
T
5000 pF R1
A
A
A
A
A
A
A
A
A
A
A
A
IN
S
OUT
S
S
S
S s
S
S
S s
S s
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
10 k
10 k
10 k
25 C R
25 C
25 C
25 C
25 C
25 C V
25 C
25 C
e
T
T
T
T
50
10 k
g
g
g
g
20 mV C
MAX
MIN
MIN
MIN
15V R
15V R
15V R
15V
b
g
A
55 C
10V
e
e a
Conditions
S
1 5 k
S s
L t
L
L
s
e
L s
e
e
25 C)
T
T
T
T
T
10 k
g
A s
A
A
A
A
2 k
10 k
2 k
C2
100 pF
15V
e
e
e
e
(Note 2)
a
e
25 C to T
25 C to T
25 C to T
25 C to T
125 C for the LM709 LM709A and 0 C
(Note 3)
200 pF and R2
5 seconds
300 mW
250 mW
g
g
MAX
MIN
MAX
MIN
g
18V
10V
5V
e
g
g
Min
350
g
25
80
85
51
2
12
10
8
LM709A
Storage Temperature Range
Lead Temperature (Soldering 10 sec )
Operating Ratings
Junction Temperature Range (Note 1)
Thermal Resistance (
0 25
g
g
Typ
100
700
150
110
170
0 6
2 5
1 8
1 8
2 0
4 8
3 5
0 3
10
40
40
LM709 LM709A LM709C
LM709 LM709A LM709C
LM709 LM709A
LM709C
H Package
8-Pin N Package
14-Pin N Package
14
13
Max
200
100
250
2 0
3 6
1 5
3 0
0 6
50
30
10
10
15
25
70
50
s
T
A s
g
g
Min
150
g
25
70
40
12
10
8
a
70 C for the LM709C with the following conditions
LM709
0 25
g
g
g
Typ
200
400
150
100
100
1 0
2 6
0 3
3 0
6 0
0 5
50
10
45
90
25
20
JA
14
13
10
)
Max
500
200
150
200
500
5 0
5 5
1 0
6 0
1 5
JA
30
70
T
(Note 3)
J(MAX)
g
g
Min
g
50
15
65
50
150 C W (
12
10
8
and T
LM709C
b
b
0 25
g
g
g
0 36
Typ
300
100
250
150
125
250
2 0
2 6
0 3
6 0
10
12
45
90
25
75
A
14
13
10
65 C to
55 C to
0 C to
1500
JC
Max
500
200
400
750
7 5
6 6
1 0
2 0
30
10
) 45 C W
134 C W
109 C W
a
a
a
150 C
300 C
150 C
100 C
V mV
Units
V
mA
mV
mV
V C
nA
nA
k
dB
nA
k
V V
%
V
V
A
s
s

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